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N3839TC300 PDF даташит

Спецификация N3839TC300 изготовлена ​​​​«IXYS» и имеет функцию, называемую «Phase Control Thyristor».

Детали детали

Номер произв N3839TC300
Описание Phase Control Thyristor
Производители IXYS
логотип IXYS логотип 

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N3839TC300 Даташит, Описание, Даташиты
WESTCODE
An IXYS Company
Date:- 22 Oct, 2003
Data Sheet Issue:- 1
Phase Control Thyristor
Types N3839TC300 to N3839TC350
Old Type No.: N1663CH30-35
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3000-3500
3000-3500
3000-3500
3100-3600
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (continuous, 50Hz), (Note 6)
Critical rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IGM=4A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
3839
2668
1644
7527
6647
49.5
55.0
12.25×106
15.13×106
75
150
300
5
5
50
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 1 of 11
October, 2003









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N3839TC300 Даташит, Описание, Даташиты
WESTCODE An IXYS Company
Characteristics
Phase Control Thyristor Types N3839TC300 to N3839TC350
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irr Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
63
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
-
1.0
3.0
13000
7800
280
55
600
1100
-
-
-
1.23
1.74 ITM=6000A
2.51 ITM=11500A
0.95
0.14
- VD=80% VDRM, linear ramp, gate o/c
250 Rated VDRM
250 Rated VRRM
3.0
300 Tj=25°C
VD=10V, IT=3A
0.25 Rated VDRM
1000 Tj=25°C
1.5 VD=67% VDRM, IT=6000A, di/dt=10A/µs,
4.0 IFG=2A, tr=0.5µs, Tj=25°C
-
8500 ITM=4000A, tp=2000µs, di/dt=10A/µs,
- Vr=100V
-
-
-
0.008
ITM=4000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.016 Single side cooled
77
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 2 of 11
October, 2003









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N3839TC300 Даташит, Описание, Даташиты
WESTCODE An IXYS Company
Phase Control Thyristor Types N3839TC300 to N3839TC350
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
30
32
34
35
VDRM VDSM VRRM
V
3000
3200
3400
3500
VRSM
V
3100
3300
3500
3600
VD VR
DC V
1800
1920
2040
2100
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance (1 min), the on-state rate of rise of current must
not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to
the total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
8.0 Computer Modelling Parameters
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 3 of 11
October, 2003










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