BUK444-200 Datasheet PDF - NXP Semiconductors
| Part Number | BUK444-200 | |
| Description | PowerMOS transistor | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and BUK444-200 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
Preview 1 page No Preview Available !
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK444
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-200A
200
5.3
25
0.4
MAX.
-200B
200
4.7
25
0.5
UNIT
V
A
W
Ω
PINNING - SOT186
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Ths = 25 ˚C
ID Drain current (DC)
Ths = 100 ˚C
IDM Drain current (pulse peak value) Ths = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Ths = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
200
200
30
-200A
5.3
3.3
21
-200B
4.7
3.0
19
25
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 5 K/W
- 55 - K/W
April 1993 1 Rev 1.100
|
| |
 
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-200A/B
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
10000 C / pF
BUK4y4-200
1000
Ciss
100 Coss
Crss
10
0 20 40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12 VGS / V
10
8
BUK454-200
VDS / V =40
160
6
4
2
0
0 4 8 12 16 20 24 28
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 9 A; parameter VDS
IF / A
20
BUK454-200A
15
10
Tj / C = 150
5
25
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Ths / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 9 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
April 1993 5 Rev 1.100
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK444-200 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK444-200.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| BUK444-200 | The function is PowerMOS transistor. NXP Semiconductors | |
| BUK444-200 | The function is PowerMOS transistor. NXP Semiconductors | |
| BUK444-200A | The function is PowerMOS transistor. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
BUK4
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||