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BUK444-800A PDF даташит

Спецификация BUK444-800A изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «PowerMOS transistor».

Детали детали

Номер произв BUK444-800A
Описание PowerMOS transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BUK444-800A Даташит, Описание, Даташиты
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK444
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-800A
800
1.4
30
6.0
MAX.
-800B
800
1.2
30
8.0
UNIT
V
A
W
PINNING - SOT186
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 k
-
-
-
-
ID Drain current (DC)
Ths = 25 ˚C
ID Drain current (DC)
Ths = 100 ˚C
IDM Drain current (pulse peak value) Ths = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Ths = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
800
800
30
-800A
1.4
0.9
5.6
-800B
1.2
0.75
4.8
30
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 4.17 K/W
- 55 - K/W
April 1993 1 Rev 1.100









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BUK444-800A Даташит, Описание, Даташиты
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-800A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 800 V; VGS = 0 V; Tj = 25 ˚C
VDS = 800 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK444-800A
ID = 1.0 A
BUK444-800B
MIN.
800
2.1
-
-
-
-
-
TYP.
-
3.0
2
0.1
10
5.0
6.0
MAX. UNIT
-V
4.0 V
20 µA
1.0 mA
100 nA
6.0
8.0
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 1.0 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 1.9 A;
VGS = 10 V; RGS = 50 ;
Rgen = 50
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
1.0
-
-
-
-
-
-
-
-
TYP.
2.3
450
42
15
15
25
50
30
4.5
MAX.
-
750
70
30
20
40
65
40
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- 7.5 - nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65% ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 1500 V
- 12 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 1.4 A ; VGS = 0 V
trr Reverse recovery time IF = 1.4 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 100 V
MIN. TYP. MAX. UNIT
- - 1.4 A
- - 5.6 A
- 1.0 1.3 V
- 230 -
ns
- 1.9 - µC
April 1993 2 Rev 1.100









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BUK444-800A Даташит, Описание, Даташиты
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-800A/B
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100PD/PD 25 ˚C = f(Ths)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100ID/ID 25 ˚C = f(Ths); conditions: VGS 10 V
ID / A
10
RDS(ON) = VDS/ID
1
A
B
DC
0.1
BUK444-800A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
10
100 1000
VDS / V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
10
D=
0.5
1 0.2
0.1
0.05
0.1 0.02
BUKx44-hv
PD tp
D
=
tp
T
0
0.01
1E-07
1E-05
1E-03
t/s
T
1E-01
t
1E+01
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
ID / A
4
3
BUK454-800A
10
6
5
4.8
2
4.6
4.4
1
4.2
4
0
0 4 8 12 16 20 24 28
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
20
4 4.2 4.4
15 4.6
10
5
BUK454-800A
VGS / V =
4.8
5
6
10
0
0
Fig.6.
123
ID / A
4
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
April 1993 3 Rev 1.100










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