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даташит BR2500 PDF ( Datasheet )

BR2500 Datasheet Download - EIC discrete Semiconductors

Номер произв BR2500
Описание SILICON BRIDGE RECTIFIERS
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 



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BR2500 Даташит, Описание, Даташиты
BR2500 - BR2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNITS
VRRM 50 100 200 400 600 800 1000 Volts
VRMS
35
70 140 280 420 560 700 Volts
VDC 50 100 200 400 600 800 1000 Volts
IF(AV)
25 Amps.
IFSM
I2 t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.45
- 40 to + 150
- 40 to + 150
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998







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BR2500 Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
30
25
20
15
10
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
5 (12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µ s
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)










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