BCR141S PDF даташит
Спецификация BCR141S изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface/ driver circuit)». |
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Детали детали
Номер произв | BCR141S |
Описание | NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface/ driver circuit) |
Производители | Siemens Semiconductor Group |
логотип |
4 Pages
No Preview Available ! |
NPN Silicon Digital Transistor Array
• Switching circuit, inverter, interface,
driver circuit
• Two (galvanic) internal isolated Transistors
in one package
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
BCR 141S
Type
Marking Ordering Code Pin Configuration
Package
BCR 141S WDs Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
30
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
≤ 275
≤ 140
K/W
Semiconductor Group
1
Nov-26-1996
No Preview Available ! |
BCR 141S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
50
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
R1/R2
15
0.9
-
-
-
-
-
-
-
-
22
1
-
-
100
350
-
0.3
1.5
2.5
29
1.1
V
nA
µA
-
V
kΩ
-
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
-
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300µs; D < 2%
130 -
3-
MHz
pF
Semiconductor Group
2
Nov-26-1996
No Preview Available ! |
BCR 141S
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
hFE
10 2
10 1
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 2
IC mA
10 1
10 0
10 -1
10 0
10 1 mA
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
10 0
0.0 0.2 0.4 0.6
V 1.0
VCEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 2
mA
IC
10 1
10 1
mA
IC 10 0
10 -1
10 0
10 -2
10 -1
10 -1
10 0
Semiconductor Group
10 1
V
Vi(on)
3
10 -3
0.0 0.5 1.0 1.5 2.0
V 3.0
Vi(off)
Nov-26-1996
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Номер в каталоге | Описание | Производители |
BCR141 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | Siemens Semiconductor Group |
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