DataSheet26.com

BCR141S PDF даташит

Спецификация BCR141S изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface/ driver circuit)».

Детали детали

Номер произв BCR141S
Описание NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface/ driver circuit)
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

4 Pages
scroll

No Preview Available !

BCR141S Даташит, Описание, Даташиты
NPN Silicon Digital Transistor Array
• Switching circuit, inverter, interface,
driver circuit
• Two (galvanic) internal isolated Transistors
in one package
• Built in bias resistor (R1=22k, R2=22k)
BCR 141S
Type
Marking Ordering Code Pin Configuration
Package
BCR 141S WDs Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 115°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Values
50
50
10
30
100
250
150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
275
140
K/W
Semiconductor Group
1
Nov-26-1996









No Preview Available !

BCR141S Даташит, Описание, Даташиты
BCR 141S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
IEBO
-
hFE
50
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
R1/R2
15
0.9
-
-
-
-
-
-
-
-
22
1
-
-
100
350
-
0.3
1.5
2.5
29
1.1
V
nA
µA
-
V
k
-
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
-
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300µs; D < 2%
130 -
3-
MHz
pF
Semiconductor Group
2
Nov-26-1996









No Preview Available !

BCR141S Даташит, Описание, Даташиты
BCR 141S
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
hFE
10 2
10 1
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 2
IC mA
10 1
10 0
10 -1
10 0
10 1 mA
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
10 0
0.0 0.2 0.4 0.6
V 1.0
VCEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 2
mA
IC
10 1
10 1
mA
IC 10 0
10 -1
10 0
10 -2
10 -1
10 -1
10 0
Semiconductor Group
10 1
V
Vi(on)
3
10 -3
0.0 0.5 1.0 1.5 2.0
V 3.0
Vi(off)
Nov-26-1996










Скачать PDF:

[ BCR141S.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BCR141NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)Siemens Semiconductor Group
Siemens Semiconductor Group
BCR141NPN Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG
BCR141FNPN Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG
BCR141L3NPN Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск