BCR141U PDF даташит
Спецификация BCR141U изготовлена «Infineon Technologies AG» и имеет функцию, называемую «NPN Silicon Digital Transistor». |
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Детали детали
Номер произв | BCR141U |
Описание | NPN Silicon Digital Transistor |
Производители | Infineon Technologies AG |
логотип |
10 Pages
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NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141.../SEMH1
BCR141/F/L3
BCR141T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
BCR141S/U
SEMH1
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Marking
Pin Configuration
Package
WDs 1=B 2=E 3=C - - - SOT23
WDs 1=B 2=E 3=C - - - TSFP-3
WD 1=B 2=E 3=C - - - TSLP-3-4
WDs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WDs 1=B 2=E 3=C - - - SC75
WDs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
WDs 1=B 2=E 3=C - - - SOT323
WD 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 Jun-14-2004
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BCR141.../SEMH1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR141, TS ≤ 102°C
BCR141F, TS ≤ 128°C
BCR141L3, TS ≤ 135°C
BCR141S, TS ≤ 115°C
BCR141T, TS ≤ 109°C
BCR141U, TS ≤ 118°C
BCR141W, TS ≤ 124°C
SEMH1, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
30
100
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 133
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Jun-14-2004
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BCR141.../SEMH1
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 350
VEB = 10 V, IC = 0
DC current gain1)
hFE
50 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.8 - 1.5
Input on voltage
Vi(on)
1 - 2.5
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 15 22 29
Resistor ratio
R1/R2 0.9 1 1.1
Unit
V
nA
µA
-
V
kΩ
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 130 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 Jun-14-2004
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Номер в каталоге | Описание | Производители |
BCR141 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | Siemens Semiconductor Group |
BCR141 | NPN Silicon Digital Transistor | Infineon Technologies AG |
BCR141F | NPN Silicon Digital Transistor | Infineon Technologies AG |
BCR141L3 | NPN Silicon Digital Transistor | Infineon Technologies AG |
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