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BCR142F PDF даташит

Спецификация BCR142F изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «NPN Silicon Digital Transistor».

Детали детали

Номер произв BCR142F
Описание NPN Silicon Digital Transistor
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCR142F Даташит, Описание, Даташиты
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=22k, R2=47k)
BCR142...
BCR142/F/L3
BCR142T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR142
BCR142F
BCR142FL3
BCR142T
BCR142W
Marking
WZs 1=B
WZs 1=B
WZ 1=B
WZs 1=B
WZs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1 Aug-29-2003









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BCR142F Даташит, Описание, Даташиты
BCR142...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR142, TS 102°C
BCR142F, TS 128°C
BCR142L3, TS 135°C
BCR142T, TS 109°C
BCR142W, TS 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR142
BCR142F
BCR142L3
BCR142T
BCR142W
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
30
100
200
250
250
250
250
150
-65 ... 150
Value
240
90
60
165
105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Aug-29-2003









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BCR142F Даташит, Описание, Даташиты
BCR142...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 227
VEB = 10 V, IC = 0
DC current gain-1)
hFE
70 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.5 - 1.2
Input on voltage
Vi(on)
0.8 - 2.5
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 15 22 29
Resistor ratio
R1/R 2
0.42 0.47 0.52
Unit
V
nA
µA
-
V
k
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 Aug-29-2003










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Номер в каталогеОписаниеПроизводители
BCR142NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drver circuit)Siemens Semiconductor Group
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BCR142NPN Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG
BCR142FNPN Silicon Digital TransistorInfineon Technologies AG
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