BCR146L3 PDF даташит
Спецификация BCR146L3 изготовлена «Infineon Technologies AG» и имеет функцию, называемую «NPN Silicon Digital Transistor». |
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Детали детали
Номер произв | BCR146L3 |
Описание | NPN Silicon Digital Transistor |
Производители | Infineon Technologies AG |
логотип |
8 Pages
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NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=47kΩ, R2=22kΩ)
BCR146...
BCR146/F/L3
BCR146T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR146
BCR146F
BCR146L3
BCR146T
BCR146W
Marking
WLs
1=B
WLs
1=B
WL 1=B
WLs
1=B
WLs
1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1 Aug-29-2003
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BCR146...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR146, TS ≤ 102°C
BCR146F, TS ≤ 128°C
BCR146L3, TS ≤ 135°C
BCR146T, TS ≤ 109°C
BCR146W, TS ≤ 124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR146
BCR146F
BCR146L3
BCR146T
BCR146W
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
50
70
200
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 165
≤ 105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Aug-29-2003
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BCR146...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 220
VEB = 10 V, IC = 0
DC current gain1)
hFE
50 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
1.2 - 2.6
Input on voltage
Vi(on)
1.5 -
4
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 32 47 62
Resistor ratio
R1/R 2
1.92 2.14 2.36
Unit
V
nA
µA
-
V
kΩ
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 Aug-29-2003
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BCR146L3 | NPN Silicon Digital Transistor | Infineon Technologies AG |
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