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BCR148 PDF даташит

Спецификация BCR148 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «NPN Silicon Digital Transistor».

Детали детали

Номер произв BCR148
Описание NPN Silicon Digital Transistor
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCR148 Даташит, Описание, Даташиты
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R1=47k, R2=47k)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR148.../SEMH2
BCR148/F/L3
BCR148T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR148
BCR148F
BCR148L3
BCR148S
BCR148T
BCR148U
BCR148W
SEMH2
BCR148S/U
SEMH2
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Marking
Pin Configuration
Package
WEs 1=B 2=E 3=C - - - SOT23
WEs 1=B 2=E 3=C - - - TSFP-3
WE 1=B 2=E 3=C - - - TSLP-3-4
WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WEs 1=B 2=E 3=C - - - SC75
WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
WEs 1=B 2=E 3=C - - - SOT323
WE 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-17-2004









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BCR148 Даташит, Описание, Даташиты
BCR148.../SEMH2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR148, TS 102°C
BCR148F, TS 128°C
BCR148L3, TS 135°C
BCR148S, TS 115°C
BCR148T, TS 109°C
BCR148U, TS 118°C
BCR148W, TS 124°C
SEMH2, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR148
BCR148F
BCR148L3
BCR148S
BCR148T
BCR148U
BCR148W
SEMH2
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
50
70
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
240
90
60
140
165
133
105
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-17-2004









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BCR148 Даташит, Описание, Даташиты
BCR148.../SEMH2
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 164
VEB = 10 V, IC = 0
DC current gain1)
hFE
70 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.8 - 1.5
Input on voltage
Vi(on)
1-3
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 32 47 62
Resistor ratio
R1/R2 0.9 1 1.1
Unit
V
nA
µA
-
V
k
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 May-17-2004










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