BCR151 PDF даташит
Спецификация BCR151 изготовлена «Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor». |
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Детали детали
Номер произв | BCR151 |
Описание | PNP Silicon Digital Transistor |
Производители | Infineon Technologies AG |
логотип |
6 Pages
No Preview Available ! |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ)
BCR151...
BCR151F/L3
BCR151T
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR151F*
BCR151L3*
BCR151T*
* Preliminary
Marking
UDs
1=B
UD 1=B
UDs
1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR151F, TS ≤ 128°C
BCR151L3, TS ≤ 135°C
BCR151T, TS ≤ 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
- TSFP-3
- TSLP-3-4
- SC75
Value
50
50
10
50
50
250
250
250
150
-65 ... 150
Unit
V
mA
mW
°C
Dec-09-2003
No Preview Available ! |
BCR151...
Thermal Resistance
Parameter
Junction - soldering point1)
BCR151F
BCR151L3
BCR151T
Symbol
RthJS
Value
≤ 90
≤ 60
≤ 165
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
IC = 5 mA, IB = 0.25 mA
V(BR)CBO 50
I CBO
-
I EBO
-
hFE 70
VCEsat
-
--
- 100
- 75
--
- 0.3
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 1 mA, VCE = 0.3 V
Input resistor
Resistor ratio
Vi(off)
Vi(on)
R1
R1/R 2
0.5 - 1.8
1-3
70 100 130
0.9 1 1.1
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 100 MHz
fT - 120 -
Ccb - 3 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
Unit
V
nA
µA
-
V
kΩ
-
MHz
pF
2 Dec-09-2003
No Preview Available ! |
BCR151...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage
VCEsat = ƒ(IC), hFE = 20
10 -1
A
10 2
10 -2
10 -3
10
1
10
-4
10 -3
10 -2
A 10 -1
IC
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -4
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 V 0.5
VCEsat
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -1
A
10 -2
A
10 -2
10 -3
10 -3
10 -4
10 -4
10 -5
10
-5
10
-1
10 0
10 1 V 10 2
Vi(on)
10 -6
0.5 1 1.5 2 2.5 3 V
4
Vi(off)
3 Dec-09-2003
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Номер в каталоге | Описание | Производители |
BCR151 | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR151F | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR151L3 | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR151T | PNP Silicon Digital Transistor | Infineon Technologies AG |
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