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BCR162F PDF даташит

Спецификация BCR162F изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor».

Детали детали

Номер произв BCR162F
Описание PNP Silicon Digital Transistor
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCR162F Даташит, Описание, Даташиты
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 4.7k, R2 = 4.7k)
BCR162...
BCR162/F/L3
BCR162T
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR162
BCR162F
BCR162L3
BCR162T
Marking
WUs 1=B
WUs 1=B
WU 1=B
WUs 1=B
Pin Configuration
2=E 2=C -
-
2=E 2=C -
-
2=E 2=C -
-
2=E 2=C -
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
1 Aug-29-2003









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BCR162F Даташит, Описание, Даташиты
BCR162...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR162, TS 102°C
BCR162F, TS 128°C
BCR162L3, TS 135°C
BCR162T, TS 109°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR162
BCR162F
BCR162L3
BCR162T
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
15
100
200
250
250
250
150
-65 ... 150
Value
240
90
60
165
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Aug-29-2003









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BCR162F Даташит, Описание, Даташиты
BCR162...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 1.61
VEB = 10 V, IC = 0
DC current gain1)
hFE
20 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.8 - 1.5
Input on voltage
Vi(on)
1 - 2.5
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 3.2 4.7 6.2
Resistor ratio
R1/R2 0.9 1 1.1
Unit
V
nA
mA
-
V
k
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 200 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 Aug-29-2003










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Номер в каталогеОписаниеПроизводители
BCR162PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ drivere circuit)Siemens Semiconductor Group
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BCR162PNP Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG
BCR162FPNP Silicon Digital TransistorInfineon Technologies AG
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