BCR164T PDF даташит
Спецификация BCR164T изготовлена «Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor». |
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Детали детали
Номер произв | BCR164T |
Описание | PNP Silicon Digital Transistor |
Производители | Infineon Technologies AG |
логотип |
6 Pages
No Preview Available ! |
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ )
BCR164...
BCR164F/L3
BCR164T
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR164F*
BCR164L3*
BCR164T*
* Preliminary
Marking
U6s 1=B
U6 1=B
U6s 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR164F, TS ≤ 128°C
BCR164L3, TS ≤ 135°C
BCR164T, TS ≤ 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
- TSFP-3
- TSLP-3-4
- SC75
Value
50
50
5
15
100
250
250
250
150
-65 ... 150
Unit
V
mA
mW
°C
Sep-03-2003
No Preview Available ! |
BCR164...
Thermal Resistance
Parameter
Junction - soldering point1)
BCR164F
BCR164L3
BCR164T
Symbol
RthJS
Value
≤ 90
≤ 60
≤ 165
Unit
-
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 50
-
-
IC = 10 µA, IE = 0
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 520
VEB = 10 V, IC = 0
DC current gain2)
hFE
30 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
Vi(off)
0.5 - 1.1
IC = 100 µA, VCE = 5 V
Input on voltage
Vi(on)
0.5 - 1.4
IC = 2 mA, VCE = 0.3 V
Unit
V
nA
µA
-
V
Input resistor
Resistor ratio
R1
R1/R 2
3.2 4.7 6.2 kΩ
0.42 0.47 0.52 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT - 160 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2 Sep-03-2003
No Preview Available ! |
BCR164...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage
VCEsat = ƒ(IC), hFE = 20
10 -1
10 2
10 1
A
10 -2
10
0
10
-4
10 -3
10 -2
A 10 -1
IC
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -3
0
0.1 0.2 0.3 V
0.5
VCEsat
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -1
A
10 -2
10 -2
A
10 -3
10 -4
10 -3
10 -5
10
-4
10
-1
10 0
10 1 V 10 2
Vi(on)
10 -6
0 0.5 1 V
2
Vi(off)
3 Sep-03-2003
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Номер в каталоге | Описание | Производители |
BCR164 | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR164F | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR164L3 | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR164T | PNP Silicon Digital Transistor | Infineon Technologies AG |
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