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BCR166L3 PDF даташит

Спецификация BCR166L3 изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor».

Детали детали

Номер произв BCR166L3
Описание PNP Silicon Digital Transistor
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCR166L3 Даташит, Описание, Даташиты
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 4.7k, R2 = 47k)
BCR166.../SEMB13
BCR166/F/L3
BCR166T/W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SEMB13
SEMB13
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Marking
Pin Configuration
Package
WTs 1=B 2=E 3=C - - - SOT23
WTs 1=B 2=E 3=C - - - TSFP-3
WT 1=B 2=E 3=C - - - TSLP-3-4
WTs 1=B 2=E 3=C - - - SC75
WTs 1=B 2=E 3=C - - - SOT323
WB 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 Jun-14-2004









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BCR166L3 Даташит, Описание, Даташиты
BCR166.../SEMB13
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR166, TS 102°C
BCR166F, TS 128°C
BCR166L3, TS 135°C
BCR166T, TS 109°C
BCR166W, TS 124°C
SEMB13, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SEMB13
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
15
100
200
250
250
250
250
250
150
-65 ... 150
Value
240
90
60
165
105
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Jun-14-2004









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BCR166L3 Даташит, Описание, Даташиты
BCR166.../SEMB13
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 155
VEB = 5 V, IC = 0
DC current gain1)
hFE
70 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.4 - 0.8
Input on voltage
Vi(on)
0.5 - 1.4
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 3.2 4.7 6.2
Resistor ratio
R1/R 2
0.09 0.1 0.11
Unit
V
nA
µA
-
V
k
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 160 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 Jun-14-2004










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Номер в каталогеОписаниеПроизводители
BCR166L3PNP Silicon Digital TransistorInfineon Technologies AG
Infineon Technologies AG

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