BCR169F PDF даташит
Спецификация BCR169F изготовлена «Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor». |
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Детали детали
Номер произв | BCR169F |
Описание | PNP Silicon Digital Transistor |
Производители | Infineon Technologies AG |
логотип |
10 Pages
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PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7k Ω)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR169.../SEMB3
BCR169/F/L3
BCR169T/W
C
3
R1
12
BE
EHA07180
Type
BCR169
BCR169F
BCR169L3
BCR169S
BCR169T
BCR169U
BCR169W
SEMB3
BCR169S/U
SEMB3
C1 B2 E2
654
R1
TR1
R1
TR2
123
E1 B1 C2
EHA07266
Marking
Pin Configuration
Package
WSs 1=B 2=E 3=C - - - SOT23
WSs 1=B 2=E 3=C - - - TSFP-3
WS 1=B 2=E 3=C - - - TSLP-3-4
WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323
WSs 1=B 2=E 3=C - - - SC75
WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
WSs 1=B 2=E 3=C - - - SOT323
WS 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-18-2004
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BCR169.../SEMB3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR169, TS ≤ 102°C
BCR169F, TS ≤ 128°C
BCR169L3, TS ≤ 135°C
BCR169S, TS ≤ 115°C
BCR169T, TS ≤ 109°C
BCR169U, TS ≤ 118°C
BCR169W, TS ≤ 124°C
SEMB3, TS ≤ 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR169
BCR169F
BCR169L3
BCR169S
BCR169T
BCR169U
BCR169W
SEMB3
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
15
100
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤ 240
≤ 90
≤ 60
≤ 140
≤ 165
≤ 133
≤ 105
≤ 300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-18-2004
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BCR169.../SEMB3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
-
Emitter-base breakdown voltage
V(BR)EBO 5 - -
IE = 10 µA, IC = 0
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
DC current gain1)
hFE 120 - 630
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat - - 0.3
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.4 - 0.8
Input on voltage
Vi(on)
0.5 - 1.1
IC = 2 mA, VCE = 0.3 V
Input resistor
R1 3.2 4.7 6.2
Unit
V
nA
-
V
kΩ
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 200 - MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
3 May-18-2004
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Номер в каталоге | Описание | Производители |
BCR169 | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) | Siemens Semiconductor Group |
BCR169 | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR169F | PNP Silicon Digital Transistor | Infineon Technologies AG |
BCR169L3 | PNP Silicon Digital Transistor | Infineon Technologies AG |
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