(PDF) BCR169S Datasheet - PNP Silicon Digital Transistor

Número de pieza	BCR169S
Descripción	PNP Silicon Digital Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BCR169S PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) C1 B2 E2 654 R1 TR1 R1 TR2 4 5 6 3 2 1 VPS05604 Type BCR169S Marking WSs 123 E1 B1 C2 EHA07266 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg RthJS Value 50 50 5 15 100 250 150 -65 ... 150 140 Unit V mA mW °C K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 1 page

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PDF BCR169S Data sheet ( Hoja de datos )