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BCR16CM PDF даташит

Спецификация BCR16CM изготовлена ​​​​«Mitsubishi Electric Semiconductor» и имеет функцию, называемую «TRIAC».

Детали детали

Номер произв BCR16CM
Описание TRIAC
Производители Mitsubishi Electric Semiconductor
логотип Mitsubishi Electric Semiconductor логотип 

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BCR16CM Даташит, Описание, Даташиты
BCR16CM
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
φ3.6±0.2
1.0
0.8
2.5 2.5 0.5 2.6
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
1 2 3 Measurement point of
case temperature
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-220
APPLICATION
Contactless AC switches , light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet · electric fan, solenoid drivers,
small motor control, copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=100°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
16
170
121
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999









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BCR16CM Даташит, Описание, Даташиты
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@
#
!
@
#
Tj=125°C, VDRM applied
Tc=25°C, ITM=25A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6, RG=330
Tj=25°C, VD=6V, RL=6, RG=330
Tj=125°C, VD=1/2VDRM
Junction to case V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
V5. High sensitivity (IGT20mA) is also available. (IGT item 1)
Limits
Min. Typ. Max.
Unit
— — 2.0 mA
— — 1.5
V
— — 1.5
V
— — 1.5
V
— — 1.5
V
— — 30 V5 mA
— — 30 V5 mA
— — 30 V5 mA
0.2 —
V
— — 1.4 °C/ W
V3 — — V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L 10
R—
12 600
L 10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–8A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
7
5
3
2
102
7 Tj = 125°C
5
3
2
Tj = 25°C
101
7
5
3
2
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999









No Preview Available !

BCR16CM Даташит, Описание, Даташиты
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
3
2 VGM = 10V
101
7
5
3
2
VGT = 1.5V
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
100
7
5
3
2
IFGT I, IRGT I, IRGT III
10–1
7
5
101 2 3 5 7 102 2 3
VGD = 0.2V
5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
40
35
30 360°
CONDUCTION
25 RESISTIVE,
INDUCTIVE
20 LOADS
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
4
3
IRGT III
2
102
IFGT I, IRGT I
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102 2 3 5 7 103
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
02468
10 12 14
16 18 20
RMS ON-STATE CURRENT (A)
Feb.1999










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