|
|
PDF BCR16UM Data sheet ( Hoja de datos )
| Número de pieza | BCR16UM | |
| Descripción | MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BCR16UM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
BCR16UM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
10.2 4.5
1.27
TYPE
NAME
VOLTAGE
CLASS
V φ3.8 ± 0.2
1.4
0.8
2.54
2.54 0.6
2.6 ± 0.4
¡IT (RMS) ...................................................................... 16A
¡VDRM ..............................................................400V/600V
¡IFGT !, IRGT !, IRGT # ........................................... 15mA
¡Viso........................................................................ 1500V
APPLICATION
Light dimmer
V Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=79°C V3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.3
1500
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
1 page  
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120 I QUADRANT
III QUADRANT
100
80 # 2
#1
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
5
IFGT I
TYPICAL EXAMPLE
Tj = 25°C
4 IRGT I
3
IRGT III
2
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR16UM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BCR16UM | MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |