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BCR179T PDF даташит

Спецификация BCR179T изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon Digital Transistor».

Детали детали

Номер произв BCR179T
Описание PNP Silicon Digital Transistor
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCR179T Даташит, Описание, Даташиты
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit.
Built in bias resistor (R1 = 10k)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR179.../SEMB4
BCR179F/L3
BCR179T
C
3
R1
12
BE
EHA07180
Type
BCR179F
BCR179L3
BCR179T
SEMB4
SEMB4
C1 B2 E2
654
R1
TR1
R1
TR2
123
E1 B1 C2
EHA07266
Marking
Pin Configuration
Package
WWs 1=B 2=E 3=C - - - TSFP-3
WW 1=B 2=E 3=C - - - TSLP-3-4
WWs 1=B 2=E 3=C - - - SC75
WW 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-17-2004









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BCR179T Даташит, Описание, Даташиты
BCR179.../SEMB4
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation
BCR179F, TS 128°C
BCR179L3, TS 135°C
BCR179T, TS 109°C
SEMB4, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR179F
BCR179L3
BCR179T
SEMB4
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
20
100
250
250
250
250
150
150 ... -65
Value
90
60
109
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-17-2004









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BCR179T Даташит, Описание, Даташиты
BCR179.../SEMB4
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
Collector-base cutoff current
VCB = 40 V, IE = 0
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0,5 mA
ICBO
--
hFE 120 -
VCEsat - -
Input off voltage
IC = 100 °C, VCE = 5 V
Vi(off)
0,4 -
Input on voltage
IC = 2 mA, VCE = 0,3 V
Vi(on)
0,5 -
Input resistor
R1 7 10
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 150
Ccb - 1,2
max.
-
-
-
100
630
0,3
1
1,1
13
-
-
Unit
V
nA
-
V
k
MHz
pF
1Pulse test: t < 300µs; D < 2%
3 May-17-2004










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Номер в каталогеОписаниеПроизводители
BCR179PNP Silicon Digital TransistorInfineon Technologies AG
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