BCW68G PDF даташит
Спецификация BCW68G изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «PNP Silicon AF Transistors (For general AF applications High current gain)». |
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Детали детали
Номер произв | BCW68G |
Описание | PNP Silicon AF Transistors (For general AF applications High current gain) |
Производители | Siemens Semiconductor Group |
логотип |
6 Pages
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PNP Silicon AF Transistors
q For general AF applications
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCW 65, BCW 66 (NPN)
BCW 67
BCW 68
Type
BCW 67 A
BCW 67 B
BCW 67 C
BCW 68 F
BCW 68 G
BCW 68 H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
Ordering Code
(tape and reel)
Q62702-C1560
Q62702-C1480
Q62702-C1681
Q62702-C1893
Q62702-C1322
Q62702-C1555
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
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Maximum Ratings
Parameter
Symbol
BCW 67
Values
BCW 68
Collector-emitter voltage
VCE0
32
45
Collector-base voltage
VCB0
45
60
Emitter-base voltage
VEB0
5
5
Collector current
IC
800
Peak collector current
ICM
1
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 79 ˚C Ptot
330
Junction temperature
Tj
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
≤ 285
≤ 215
BCW 67
BCW 68
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
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BCW 67
BCW 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCW 67
BCW 68
Collector-base breakdown voltage
IC = 10 µA
BCW 67
BCW 68
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 32 V
VCB = 45 V
VCB = 32 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
BCW 67
BCW 68
BCW 67
BCW 68
Emitter-base cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 10 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 10 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 100 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 500 mA, VCE = 2 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
V(BR)CB0
32
45
–
–
–
–
V(BR)EB0
ICB0
IEB0
hFE
45
60
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
20 nA
20 nA
20 µA
20 µA
20 nA
–
35 –
50 –
80 –
–
–
–
75 –
120 –
180 –
–
–
–
100 160 250
160 250 400
250 350 630
35 –
60 –
100 –
–
–
–
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
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DataSheet26.com | 2020 | Контакты | Поиск |