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BCW68G PDF даташит

Спецификация BCW68G изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «PNP Silicon AF Transistors (For general AF applications High current gain)».

Детали детали

Номер произв BCW68G
Описание PNP Silicon AF Transistors (For general AF applications High current gain)
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

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BCW68G Даташит, Описание, Даташиты
PNP Silicon AF Transistors
q For general AF applications
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCW 65, BCW 66 (NPN)
BCW 67
BCW 68
Type
BCW 67 A
BCW 67 B
BCW 67 C
BCW 68 F
BCW 68 G
BCW 68 H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
Ordering Code
(tape and reel)
Q62702-C1560
Q62702-C1480
Q62702-C1681
Q62702-C1893
Q62702-C1322
Q62702-C1555
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91









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BCW68G Даташит, Описание, Даташиты
Maximum Ratings
Parameter
Symbol
BCW 67
Values
BCW 68
Collector-emitter voltage
VCE0
32
45
Collector-base voltage
VCB0
45
60
Emitter-base voltage
VEB0
5
5
Collector current
IC
800
Peak collector current
ICM
1
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 79 ˚C Ptot
330
Junction temperature
Tj
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
285
215
BCW 67
BCW 68
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2









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BCW68G Даташит, Описание, Даташиты
BCW 67
BCW 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCW 67
BCW 68
Collector-base breakdown voltage
IC = 10 µA
BCW 67
BCW 68
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 32 V
VCB = 45 V
VCB = 32 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
BCW 67
BCW 68
BCW 67
BCW 68
Emitter-base cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 10 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 10 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 100 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 500 mA, VCE = 2 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
V(BR)CB0
32
45
V(BR)EB0
ICB0
IEB0
hFE
45
60
5
20 nA
20 nA
20 µA
20 µA
20 nA
35 –
50 –
80 –
75 –
120 –
180 –
100 160 250
160 250 400
250 350 630
35 –
60 –
100 –
1) Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
3










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