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BCW68G PDF даташит

Спецификация BCW68G изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «PNP Silicon AF Transistors».

Детали детали

Номер произв BCW68G
Описание PNP Silicon AF Transistors
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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BCW68G Даташит, Описание, Даташиты
PNP Silicon AF Transistors
 For general AF applications
 High current gain
 Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 (NPN)
BCW67, BCW68
3
2
1 VPS05161
Type
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCW67
BCW68
32 45
45 60
55
800
1
100
200
330
150
-65 ... 150
Junction - soldering point1)
RthJS
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001









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BCW68G Даташит, Описание, Даташиты
BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW67
BCW68
V(BR)CEO
32
45
-
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW67
BCW68
V(BR)CBO
45
60
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW67
BCW68
ICBO
nA
- - 20
- - 20
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW67
BCW68
ICBO
µA
- - 20
- - 20
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
- - 20 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
35 -
50 -
80 -
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
75 -
120 -
180 -
-
-
-
100 160 250
160 250 400
250 350 630
1) Pulse test: t 300µs, D = 2%
2
Jul-10-2001









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BCW68G Даташит, Описание, Даташиты
BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
DC current gain 1)
IC = 500 mA, VCE = 2 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
35 -
60 -
100 -
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
V
- - 0.3
- - 0.7
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
- - 1.25
- -2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT - 200 - MHz
Ccb - 6 - pF
Ceb - 60 -
3 Jul-10-2001










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