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Datasheet BCW68G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BCW68GGENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO •c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol •Total Device ADissipation, T = 25°C D
Motorola Semiconductors
Motorola Semiconductors
transistor
2BCW68GPNP General Purpose Amplifier

Features: tFor general AF applications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW65,BCW66(NPN) Applications: t and switching applications BCW67/BCW68 Ordering Information Type No. BCW67A/B/C BCW68F/G/H Marking: DA/DB/DC DF/DG/DH Maximum Ratings & C
Multicomp
Multicomp
amplifier
3BCW68GSILICON PNP TRANSISTORS

BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen
Central Semiconductor
Central Semiconductor
transistor
4BCW68GPNP TRANSISTOR

RoHS BCW68G PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS DABSOLUTE MAXIMUM RATINGS at Ta=25 TCharacteristic Symbol Rating Collector-Emitter Voltage Vceo -45 .,LCollector-Base Voltage Vcbo -60 Collector Current Ic -800 Collector Dissipation Ta=25 * PD 225 OJ
WEJ
WEJ
transistor
5BCW68GGENERAL PURPOSE TRANSISTOR

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAI
CDIL
CDIL
transistor


BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BCW29EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current
KEC
KEC
transistor
2BCW29PNP General Purpose Transistors

SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle
Kexin
Kexin
transistor
3BCW29Silicon Planar Epitaxial Transistor

Philips
Philips
transistor
4BCW29GENERAL PURPOSE TRANSISTOR

BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device
Motorola Semiconductors
Motorola Semiconductors
transistor
5BCW29SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2
CDIL
CDIL
transistor
6BCW29PNP general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v
NXP Semiconductors
NXP Semiconductors
transistor
7BCW29Surface mount Si-Epitaxial PlanarTransistors

BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus
Diotec Semiconductor
Diotec Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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