BCW68GR PDF даташит
Спецификация BCW68GR изготовлена «Zetex Semiconductors» и имеет функцию, называемую «PNP SILICON PLANAR MEDIUM POWER TRANSISTOR». |
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Детали детали
Номер произв | BCW68GR |
Описание | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Производители | Zetex Semiconductors |
логотип |
2 Pages
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68F –
BCW68G –
BCW68H –
DF
DG
DH
BCW68FR – 7T
BCW68GR – 5T
BCW68HR – 7N
COMPLEMENTARY TYPES – BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCES
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
BCW68
E
C
B
SOT23
VALUE
-60
-45
-5
-1000
-800
-100
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
TBA
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BCW68
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO -45
V(BR)CES -60
V ICEO=-10mA
IC=-10µA
Emitter-Base Breakdown Voltage V(BR)EBO -5
V IEBO =-10µA
Collector-Emitter
Cut-off Current
ICES
-20 nA VCES =-45V
-10 µA VCES =-45V, Tamb=150°C
Emitter-Base Cut-Off Current
IEBO
-20 nA VEBO =-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3 V
-0.7 V
IC=-100mA, IB = -10mA
IC= -500mA, IB =-50mA*
Base-Emitter Saturation Voltage VBE(sat)
-2 V
IC=-500mA,IB=-50mA*
Static
Forward
Current
Transfer
BCW68F hFE
BCW68G hFE
100 170 250
35
160 250 400
60
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68H hFE
250 350 630
100
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency
fT 100
MHz IC =-20mA, VCE =-10V
f = 100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cobo
Cibo
N
12 18 pF VCB =-10V, f =1MHz
80 pF VEB =-0.5V, f =1MHz
2 10 dB IC= -0.2mA, VCE =- 5V
RG =1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton 100 ns
toff 400 ns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
IC=-150mA
IB1=- IB2 =-15mA
RL=150Ω
TBA
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BCW68G | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | Zetex Semiconductors |
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