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BCW68H PDF даташит

Спецификация BCW68H изготовлена ​​​​«Micro Commercial Components» и имеет функцию, называемую «PNP Small Signal Transistor 330mW».

Детали детали

Номер произв BCW68H
Описание PNP Small Signal Transistor 330mW
Производители Micro Commercial Components
логотип Micro Commercial Components логотип 

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BCW68H Даташит, Описание, Даташиты
MCC
  omponents
21201 Itasca Street Chatsworth

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Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l Low Current, Low Frequency
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: DH
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO -45 V
VCBO -60 V
VEBO -5 V
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Peak Base Current
Power Dissipation@Ts=79oC
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Operating & Storage Temperature
IC -800 mA
ICM -1000 mA
IB -100 mA
IBM -200 mA
Pd 330 mW
RθJA
285(1) oC/W
RθJS 215 oC/W
Tj, TSTG -55~150 oC
Notes:
(1) Valid provided that leads are kept at
ambient temperature.
BCW68H
PNP Small
Signal Transistor
330mW
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com









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BCW68H Даташит, Описание, Даташиты
BCW68H
MCC
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
DC Current Gain(1)
at VCE = 1V, IC = 10mA
at VCE = 2V, IC = 100mA
at VCE = 2V, IC = 500mA
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
at IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
at IC = 500mA, IB = 50mA
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10µA, at IC = 0
Collector-Base Cut-off Current
at VCB = 45V, IE = 0
at VCB = 45V, IE = 0, TA = 150°C
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0
Gain-Bandwidth Product
at VCE = 10V, IC = 20mA, f = 100MHZ
Collector-Base Capacitance
at VCB = 10V, f = 1MHz
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz
Note: (1) Pulse test: t 300µs, D = 2%
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICBO
IEBO
fT
CCB
CEB
Min.
180
250
100
45
60
5
TYP.
100
6
60
Max.
Unit
630
0.3 V
1.0 V
1.25 V
2V
V
V
V
20 nA
20 µA
20 nA
MHz
pF
pF
www.mccsemi.com










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