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PDF BCW69 Data sheet ( Hoja de datos )
| Número de pieza | BCW69 | |
| Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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BCW 69, BCW 70
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCW 69, BCW 70
45 V
50 V
5V
250 mW 1)
100 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
IE = 0, - VCB = 20 V, Tj = 100/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 5 V
- IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 50 mA, - IB = 2.5 mA
- VCEsat
- VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 10 :A
– – 100 nA
– 80 mV 300 mV
– 150 mV –
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
46 01.11.2003
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW69.PDF ] | |
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