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BCW69LT1 PDF даташит

Спецификация BCW69LT1 изготовлена ​​​​«Motorola Inc» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BCW69LT1
Описание General Purpose Transistors
Производители Motorola Inc
логотип Motorola  Inc логотип 

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BCW69LT1 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW69LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–45
–5.0
–100
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Unit
Vdc
Vdc
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
BCW69LT1
BCW70LT1
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min Max Unit
–45 — Vdc
–50 — Vdc
–5.0 — Vdc
–100
nAdc
— –10 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1









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BCW69LT1 Даташит, Описание, Даташиты
BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BCW69
BCW70
hFE
Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc)
Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
VBE(on)
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
Cobo
NF
Min
120
215
–0.6
Max
260
500
–0.3
–0.75
7.0
10
Unit
Vdc
Vdc
pF
dB
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data









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BCW69LT1 Даташит, Описание, Даташиты
TYPICAL NOISE CHARACTERISTICS
(VCE = –ā5.0 Vdc, TA = 25°C)
BCW69LT1 BCW70LT1
10
7.0
5.0
3.0
2.0 1.0 mA
IC = 10 µA
30 µA
100 µA
300 µA
BANDWIDTH = 1.0 Hz
RS 0
1.0
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
300 µA
100 µA
30 µA
10 µA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = –ā5.0 Vdc, TA = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
10 Hz to 15.7 kHz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
+ ƪ ) ) ƫ ńNoise Figure is Defined as:
NF
20 log10 en2
4KTRS In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3










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