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BCW70 PDF даташит

Спецификация BCW70 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «SMALL SIGNAL PNP TRANSISTORS».

Детали детали

Номер произв BCW70
Описание SMALL SIGNAL PNP TRANSISTORS
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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BCW70 Даташит, Описание, Даташиты
BCW69
BCW70
SMALL SIGNAL PNP TRANSISTORS
Type
BCW 69
BCW 70
Marking
H1
H2
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s LOW LEVEL AUDIO AMPLIFICATION AND
SWITCHING
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VCBO
V EBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Collect or-Base Voltage (IE = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Total Dissipation at Tc = 25 oC
St orage Temperature
Max. Operating Junction Temperature
March 1996
Value
-50
-45
-50
-5
-0.1
-0.2
300
-65 to 150
150
Unit
V
V
V
V
A
A
mW
oC
oC
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BCW70 Даташит, Описание, Даташиты
BCW69/BCW70
THERMAL DATA
Rthj- amb Thermal Resistance Junction-Ambient
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max
420
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -20 V
VCB = -20 V Tj = 100 oC
V(BR)CES Collect or-Emitter
Breakdown Voltage
(VBE = 0)
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V( BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collect or-Emitter
Saturation Voltage
IC = -10 µA
IC = -2 mA
IC = -10 µA
IE = -10 µA
IC = -10 mA IB = -0.5 mA
IC = -50 mA IB = -2.5 mA
VBE(s at)
V BE(o n )
Co lle ct or- Bas e
Saturation Voltage
Base-Emitter O n
Voltage
IC = -10 mA
IC = -50 mA
IC = -2 mA
IB = -0.5 mA
IB = -2.5 mA
VCE = -5 V
hFEDC Current G ain
for BCW69
IC = -10 µA
IC = -2 mA
for BCW70
IC = -10 µA
IC = -2 mA
VCE = -5 V
VCE = -5 V
VCE = -5 V
VCE = -5 V
fT Transit ion F requency IC = -10 mA VCE = -5 V f = 100 MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1MHz
NF Noise Figure
IC = -0.2mA VCE = -5 V
f = 200 Hz Rg = 2K
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
f = 1KHz
Min.
-50
-45
-50
-5
-0.6
120
215
Typ .
-0.18
-0.72
-0.81
90
150
150
M a x.
-100
-10
-0.3
-0.75
260
500
7
10
Unit
nA
µA
V
V
V
V
V
V
V
V
V
MHz
dB
dB
2/4









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BCW70 Даташит, Описание, Даташиты
DIM.
A
B
C
D
E
F
G
H
L
M
N
O
BCW69/BCW70
MIN.
0.85
0.65
1.20
2.80
0.95
1.9
2.1
0.38
0.3
0
0.3
0.09
SOT-23 MECHANICAL DATA
mm
TYP.
MAX.
1.1
0.95
1.4
3
1.05
2.05
2.5
0.48
0.6
0.1
0.65
0.17
MIN.
33.4
25.6
47.2
110.2
37.4
74.8
82.6
14.9
11.8
0
11.8
3.5
mils
TYP.
MAX.
43.3
37.4
55.1
118
41.3
80.7
98.4
18.8
23.6
3.9
25.6
6.7
0044616/B
3/4










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