BCY79 PDF даташит
Спецификация BCY79 изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP switching transistors». |
|
Детали детали
Номер произв | BCY79 |
Описание | PNP switching transistors |
Производители | NXP Semiconductors |
логотип |
8 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY78; BCY79
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 18
No Preview Available ! |
Philips Semiconductors
PNP switching transistors
Product specification
BCY78; BCY79
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Switching and amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
MAM263
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCY78
BCY79
VCEO
collector-emitter voltage
BCY78
BCY79
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
fT transition frequency
toff turn-off time
CONDITIONS
MIN.
open emitter
−
−
open base
Tamb ≤ 45 °C
Tcase ≤ 45 °C
IC = −2 mA; VCE = −5 V
−
−
−
−
−
120
180
250
380
IC = −10 mA; VCE = −5 V
100
ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA −
MAX. UNIT
−32 V
−45 V
−32
−45
−100
340
1
V
V
mA
mW
W
220
310
460
630
− MHz
400 ns
1997 Jun 18
2
No Preview Available ! |
Philips Semiconductors
PNP switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCY78
BCY79
collector-emitter voltage
BCY78
BCY79
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 45 °C
Tcase ≤ 45 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
Product specification
BCY78; BCY79
MIN. MAX. UNIT
− −32 V
− −45 V
− −32 V
− −45 V
−5 V
− −100 mA
− −200 mA
− −200 mA
− 340 mW
−1W
−65 +150 °C
− 200 °C
−65 +150 °C
VALUE
450
150
UNIT
K/W
K/W
1997 Jun 18
3
Скачать PDF:
[ BCY79.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BCY70 | PNP general purpose transistors | NXP Semiconductors |
BCY70 | GENERAL PURPOSE AMPLIFIERS | STMicroelectronics |
BCY70 | PNP SILICON TRANSISTORS | Micro Electronics |
BCY70 | TRANSISTOR | Motorola Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |