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BCY89 PDF даташит

Спецификация BCY89 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistors».

Детали детали

Номер произв BCY89
Описание NPN general purpose transistors
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BCY89 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D126
BCY87; BCY88; BCY89
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20









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BCY89 Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistors
Product specification
BCY87; BCY88; BCY89
FEATURES
Low current (max. 30 mA)
Low voltage (max. 45 V).
APPLICATIONS
Differential amplifier applications in general industrial
service e.g. instrumentation and control
The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
PINNING
PIN(1)
1
2
3
4
5
6
DESCRIPTION
emitter TR1
emitter TR2
collector TR2
basis TR2
basis TR1
collector TR1
Note
1. All leads insulated from the case.
handbook, halfpage
64 2
1
2
63
TR2
TR1
5
4
MAM351
153
Fig.1 Simplified outline (TO-71; SOT31)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per transistor
VCBO
VCEO
Ptot
hFE
collector-base voltage
collector-emitter voltage
total power dissipation
DC current gain
BCY87
BCY88
BCY89
hFE DC current gain
fT transition frequency
CONDITIONS
MIN.
MAX.
UNIT
open emitter
45 V
open base
40 V
Tamb 25 °C
150 mW
VCE = 10 V
IC = 5 µA
80
IC = 500 µA
120 600
IC = 10 mA
100 600
IC = 50 µA; VCE = 10 V
100 450
IC = 50 µA; VCE = 10 V; f = 100 MHz 10
MHz
IC = 500 µA; VCE = 10 V; f = 100 MHz 50
MHz
1997 Jun 20
2









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BCY89 Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistors
Product specification
BCY87; BCY88; BCY89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
Tamb 25 °C
MIN.
65
MAX.
45
40
5
30
150
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
VALUE
1
UNIT
K/mW
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
ICBO
hFE
hFE
Cc
fT
collector cut-off current
BCY87
BCY88
collector cut-off current
BCY89
DC current gain
BCY87
BCY88
BCY89
DC current gain
collector capacitance
transition frequency
F noise figure
F noise figure
BCY87
BCY88; BCY89
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 20 V; Tamb = 90 °C
IE = 0; VCB = 20 V
VCE = 10 V
IC = 5 µA
IC = 500 µA
IC = 10 mA
IC = 50 µA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IE = 50 µA; VCE = 10 V;
f = 100 MHz
IE = 500 µA; VCE = 10 V;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 10 Hz to 15.7 kHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 1 kHz; B = 200 Hz
80
120
100
100
10
50
5 nA
20 nA
10 nA
600
600
450
3.5 pF
MHz
MHz
4 dB
4 dB
5 dB
1997 Jun 20
3










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