BC817-16 PDF даташит
Спецификация BC817-16 изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «NPN Silicon AF Transistors». |
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Детали детали
Номер произв | BC817-16 |
Описание | NPN Silicon AF Transistors |
Производители | Siemens Semiconductor Group |
логотип |
5 Pages
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NPN Silicon AF Transistors
q For general AF applications
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BC 807, BC 808 (PNP)
BC 817
BC 818
Type
BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40
Marking
6As
6Bs
6Cs
6Es
6Fs
6Gs
Ordering Code
Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
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Maximum Ratings
Parameter
Symbol
BC 817
Collector-emitter voltage
VCE0
45
Collector-base voltage
VCB0
50
Emitter-base voltage
VEB0
5
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TC = 79 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
Values
BC 818
25
30
5
500
1
100
200
330
150
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
≤ 285
≤ 215
BC 817
BC 818
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
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BC 817
BC 818
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 817
BC 818
Collector-base breakdown voltage
IC = 100 µA
BC 817
BC 818
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter cutoff current, VEB = 4 V
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
IC = 300 mA; VCE = 1 V
BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
V(BR)CE0
V
V(BR)CB0
45
25
–
–
–
–
V(BR)EB0
ICB0
IEB0
hFE
50
30
5
–
–
–
–
–
–
–
–
–
–
–
–
100 nA
50 µA
100 nA
–
100 160 250
160 250 400
250 350 630
VCEsat
60 –
100 –
170 –
––
–
–
–
0.7 V
VBEsat
–
–
2
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, f = 1 MHz
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
fT
Cobo
Cibo
–
–
–
170 –
6–
60 –
MHz
pF
Semiconductor Group
3
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BC817-16 | NPN Silicon AF Transistors | Siemens Semiconductor Group |
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