BC857C PDF даташит
Спецификация BC857C изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «PNP General Purpose Amplifier». |
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Детали детали
Номер произв | BC857C |
Описание | PNP General Purpose Amplifier |
Производители | Fairchild Semiconductor |
логотип |
5 Pages
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BC857A
BC857B
BC857C
C
SOT-23
Mark: 3E / 3F / 3G
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
50
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BC857A / B / C
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 1.0 µA, IC = 0
VCB = 30 V
VCB = 30 V, TA = 150°C
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 2.0 mA, VCE = 5.0 V
BC857A
BC857B
BC857C
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
NF
Output Capacitance
Noise Figure
IC = 10 mA, VCE = 5.0,
f = 100 mHz
VCB = 10 V, f = 1.0 MHz
IC = 0.2 mA, VCE = 5.0,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
45
50
5.0
125
220
420
0.6
100
15
4.0
250
475
800
0.3
0.65
0.75
0.82
4.5
10
V
V
V
nA
µA
V
V
V
V
MHz
pF
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400 125 °C
VCE = 5V
300
25 °C
200
100 - 40 °C
0
0.01
0.1 1 10 100
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 β = 10
0.2
0.15
0.1
25 °C
0.05
0
0.1
125 ºC
- 40 ºC
1 10 100
I C - COLLECTOR CURRENT (mA)
P 68
300
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Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8 - 40 ºC
0.6
25 °C
125 ºC
0.4
0.2
0
0.1 1 10 100 300
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
100
V CB= 50V
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE (ºC)
125
Collector Saturation Region
4
Ta = 25°C
3
2 Ic = 100 uA
50 mA
300 mA
1
0
100 300 700 2000 4000
I B- BASE CURRENT (uA)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
0.6
0.4
25 °C
125 ºC
0.2
0
0.1
VCE = 5V
1 10 100 200
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
0.1
1 10 100
RESISTANCE (kΩ)
1000
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
10
Cib
Cob
0.1 1
10 100
Vce- COLLECTOR VOLTAGE(V)
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