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BC858AWT1 PDF даташит

Спецификация BC858AWT1 изготовлена ​​​​«Motorola Inc» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BC858AWT1
Описание General Purpose Transistors
Производители Motorola Inc
логотип Motorola  Inc логотип 

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BC858AWT1 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC856AWT1,BWT1
BC857AWT1,BWT1
BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage
VCEO –65 –45 –30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
VEBO
IC
–80
–5.0
–100
–50
–5.0
–100
–30
–5.0
–100
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
833
– 55 to +150
°C/W
°C
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
Collector – Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min Typ Max Unit
–65 — — V
–45 —
–30 —
–80 — — V
–50 —
–30 —
–80 — — V
–50 —
–30 —
–5.0 — — V
–5.0 —
–5.0 —
— — –15 nA
— — –4.0 µA
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1









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BC858AWT1 Даташит, Описание, Даташиты
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
BC856A, BC857A, BC585A
BC856A, BC857A, BC858A
BC858C
hFE
Min
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
Collector – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
125
220
420
–0.6
fT 100
Cob —
NF —
Typ Max Unit
90 — —
150 —
270 —
180 250
290 475
520 800
— –0.3
— –0.65
–0.7 —
–0.9 —
— –0.75
— –0.82
V
V
V
— — MHz
— 4.5 pF
— 10 dB
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data









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BC858AWT1 Даташит, Описание, Даташиты
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1
BC857/BC858
2.0
1.5 VCE = –10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
–0.2
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–2.0
TA = 25°C
–1.6
–1.2
–0.8
IC =
–10 mA
–0.4
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
0
–0.02
–0.1 –1.0
IB, BASE CURRENT (mA)
–10 –20
Figure 3. Collector Saturation Region
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
–0.4 –0.6
–1.0 –2.0 –4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
–20 –30 –40
–1.0
–0.9 TA = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.7
–0.6 VBE(on) @ VCE = –10 V
–0.5
–0.4
–0.3
–0.2
–0.1 VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–0.2 –1.0
–10
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
400
300
200
150 VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0 –2.0 –3.0 –5.0
–10 –20 –30 –50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3










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