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BC858BW PDF даташит

Спецификация BC858BW изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP General Purpose Transistor».

Детали детали

Номер произв BC858BW
Описание PNP General Purpose Transistor
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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BC858BW Даташит, Описание, Даташиты
Transistors
BC858BW / BC858B
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures
1) BVCEO < -30V (IC=-1mA)
2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No.
Pakaging type
Marking
Code
Basic ordering unit (pieces)
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
When mounted on 7 × 5 × 0.6 mm ceramic board.
Limits
30
30
5
0.1
0.2
0.35
150
65 to +150
Unit
V
V
V
A
W
˚C
˚C
zExternal dimensions (Unit : mm)
BC858BW
SOT-323
ROHM : UMT3
EIAJ : EC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
00.1
(3)
0.3+- 00.1
0.15±0.05
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
BC858B
SOT-23
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
0.4+00..015
0.15+00..016
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
BVCBO
BVCEO
BVEBO
Collector cutoff current
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
VCE(sat)
VBE(on)
hFE
fT
Cob
Min.
30
30
5
0.6
210
Typ.
250
4.5
Max.
100
4
0.3
0.65
0.75
480
Unit
V
V
V
nA
µA
V
V
V
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −30V
VCB= −30V, Ta=150°C
IC/IB= −10mA/0.5mA
IC/IB= −100mA/5mA
VCE/IC= −5V/10mA
VCE/IC= −5V/2mA
VCE= −5V , IE=20mA , f=100MHz
VCB= −10V , IE=0 , f=1MHz
zElectrical characteristics curves
100 0.7
Ta=25˚C
0.6
0.5
80
0.4
60
0.3
40
0.2
20
0.1
0 IB=0mA
0 1.0 2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics ( I )
10.0
Ta=25˚C
50
8.0 45
40
35
6.0
30
25
4.0
20
15
2.0 10
5
0 1B=0µA
0 1.0 2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics ( II )
Rev.A
1/4









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BC858BW Даташит, Описание, Даташиты
Transistors
500
100
Ta=25˚C
VCE=10V
5V
1V
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig.3 DC current gain vs. collector current ( I )
500
Ta=125˚C
Ta=25˚C
100 Ta=-55˚C
VCE=5V
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig.4 DC current gain vs. collector current ( II )
500
Ta=25˚C
VCE=5V
f=1kHz
100
10
5
0.01
0.1 1.0
10
COLLECTOR CURRENT : IC(mA)
Fig.5 AC current gain vs. collector current
100
BC858BW / BC858B
Rev.A
2/4









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BC858BW Даташит, Описание, Даташиты
Transistors
BC858BW / BC858B
Ta=25˚C
IC / IB=10
0.3
0.2
0.1
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
1.8
Ta=25˚C
1.6 IC / IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC(mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
1.8
Ta=25˚C
1.6 VCE=10V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC(mA)
Fig.8 Grounded emitter propagation
characteristics
1000
Ta=25˚C
IC / IB=10
1000
15V
100
40V
VCC=3V
100
Ta=25˚C
VCC=40V
IC / IB=10
1000
15V
VCE=3V
100
Ta=25˚C
IC=10IB1=10IB2
40V
10
1.0
10 100
COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector current
10
1.0
10 100
COLLECTOR CURRENT : IC(mA)
Fig.10 Rise time vs. collector current
10
1.0
10 100
COLLECTOR CURRENT : IC(mA)
Fig.11 Storage time vs. collector current
1000
100
Ta=25˚C
VCC=40V
IC=10IB1=10IB2
100
Cib
10
Cob
Ta=25˚C
f=1MHz
10
1.0
10 100
COLLECTOR CURRENT : IC(mA)
Fig.12 Fall time vs. collector current
1
0.5 1
10 50
REVERSE BIAS VOLTAGE(V)
Fig.13 Input/output capacitance
vs. voltage
50
100MHz
200MHz
10
300MHz
Ta=25˚C
300MHz
200MHz 100MHz
1.0
0.5
0.5
1 10
100 500
COLLECTOR CURRENT : IC(mA)
Fig.14 Gain bandwidth product
Rev.A
3/4










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