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BC859B PDF даташит

Спецификация BC859B изготовлена ​​​​«Diotec Semiconductor» и имеет функцию, называемую «Surface mount General Purpose Si-Epitaxial-Planar Transistors».

Детали детали

Номер произв BC859B
Описание Surface mount General Purpose Si-Epitaxial-Planar Transistors
Производители Diotec Semiconductor
логотип Diotec Semiconductor логотип 

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BC859B Даташит, Описание, Даташиты
BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2015-05-12
2.9 ±0.1
0.4+0.1
-0.05
3
Type
Code
1.1+0.1
-0.2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
12
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
- ICM
Tj
TS
Grenzwerte (TA = 25°C)
BC856
BC857
BC860
BC858
BC859
65 V
45 V
30 V
80 V
50 V
30 V
5V
250 mW 1)
100 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
HFE
hFE
hFE
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
HFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VBEsat
- VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– 90 –
– 150 –
– 270 –
125 180 250
220 290 475
420 520 800
– – 300 mV
– – 650 mV
– 700 mV –
– 900 mV –
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1









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BC859B Даташит, Описание, Даташиты
BC856 ... BC860
Characteristics (Tj = 25°C)
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, IC = - 2 mA
- VCE = 5 V, IC = - 10 mA
- VBE
- VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
- ICBO
- ICBO
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IEBO
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA
RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
F
F
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC856A = 3A
BC856B = 3B
BC856C = 3C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
600 mV – 750 mV
– – 720 mV
– – 15 nA
– – 4 µA
– – 100 nA
100 MHz
– – 4.5 pF
– 9 pF –
– 2 dB 10 dB
1.2 dB
4 dB
< 420 K/W 1)
BC846 ... BC850
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC860B = 3F
BC860C
= 3G or 4G
BC859B = 3F
BC859C
= 3G or 4C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG










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