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99227 PDF даташит

Спецификация 99227 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую «PolarHV Power MOSFET».

Детали детали

Номер произв 99227
Описание PolarHV Power MOSFET
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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99227 Даташит, Описание, Даташиты
Advanced Technical Information
PolarHVTM
Power MOSFET
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
IXTC 26N50P
VDSS =
ID25 =
RDS(on) =
500 V
13 A
260 m
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
500
500
±20
±30
13
78
26
40
1.0
10
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t 300 µs, duty cycle d 2 %
260 m
ISOPLUS220TM (IXTC)
E153432
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99227(10/04)









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99227 Даташит, Описание, Даташиты
IXTC 26N50P
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = T , pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20 28
3600
380
48
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 4 (External)
20 ns
25 ns
58 ns
20 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
96 nC
20 nC
45 nC
0.21
1.25 K/W
K/W
ISOPLUS220 Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
26 A
78 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = 25 A
-di/dt = 100 A/µs
QRM VR = 100 V
400 ns
5.0 µC
Note: Test Current IT = 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692









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99227 Даташит, Описание, Даташиты
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
12 3 45 67
VD S - Volts
8
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
3.4
3 VGS = 10V
2.6 TJ = 125ºC
2.2
1.8
1.4
1 TJ = 25ºC
0.6
0
5 10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
© 2004 IXYS All rights reserved
IXTC 26N50P
Fig. 2. Extended Output Characteristics
@ 25ºC
60
VGS = 10V
50 7V
40
6V
30
20
5.5V
10 5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 26A
1.6
1.3 ID = 13A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
27
24
21
18
15
12
9
6
3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade










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Номер в каталогеОписаниеПроизводители
99227PolarHV Power MOSFETIXYS Corporation
IXYS Corporation

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