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PDF HMC414MS8G Data sheet ( Hoja de datos )
| Número de pieza | HMC414MS8G | |
| Descripción | GaAs InGaP HBT MMIC POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
11
Typical Applications
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 2.2 and 2.8 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the amplifier provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
11 - 58
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V / 3.6V
Vpd = 3.6V
tON, tOFF
Min.
17
21
30
Vs = 3.6V
Typ.
2.2 - 2.8
20
0.03
8
9
25
27
35
6.5
0.002 / 240
7
45
Max.
25
0.04
Min.
17
23
35
Vs = 5V
Typ.
2.2 - 2.8
20
0.03
8
9
27
30
39
7.0
0.002 / 300
7
45
Max.
25
0.04
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
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1 page  
v04.0607
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
-10
+25 C
-20 +85 C
-40 C
-30
-40
2
2.2 2.4 2.6 2.8
FREQUENCY (GHz)
3
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Power Down Isolation, Vs= 3.6V
0
-10
-20
-30
-40
-50
-60
2
2.2 2.4 2.6 2.8
FREQUENCY (GHz)
3
11
Noise Figure vs. Temperature, Vs= 3.6V
15
12
+25 C
+85 C
-40 C
9
6
3
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage
28
P1dB
26 Psat
24
22
20
18
2.75
Gain
3.25
3.75
4.25
4.75
Vcc SUPPLY VOLTAGE (Vdc)
34
30
26
22
18
14
5.25
Noise Figure vs. Temperature, Vs= 5V
15
12
+25 C
+85 C
-40 C
9
6
3
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
32
400
28
Psat
24
20
16
P1dB
Gain
320
240
Icq
160
80
12 0
2 2.4 2.8 3.2 3.6
Vpd (Vdc)
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11 - 61
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| PDF Descargar | [ Datasheet HMC414MS8G.PDF ] | |
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