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HMC415LP3 PDF даташит

Спецификация HMC415LP3 изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «GaAs InGaP HBT MMIC POWER AMPLIFIER».

Детали детали

Номер произв HMC415LP3
Описание GaAs InGaP HBT MMIC POWER AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC415LP3 Даташит, Описание, Даташиты
v03.0605
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
11
11 - 66
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
• 802.11a WLAN
• HiperLAN WLAN
• Access Points
• UNII & ISM Radios
Functional Diagram
Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
General Description
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Electrical Specifications, TA = +25° C, Vs = 3V, Vpd = 3V
Parameter
Frequency Range
Gain
Min. Typ. Max.
4.9 - 5.1
18 20
Min. Typ. Max. Min. Typ. Max.
5.1 - 5.4
5.4 - 5.9
18.5 20.5
16 19
Units
GHz
dB
Gain Variation Over Temperature
0.04 0.05
0.04 0.05
0.04 0.05 dB / °C
Input Return Loss
10
Output Return Loss
10
Output Power for 1dB
Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20
22.5
22.0
Saturated Output Power (Psat)
25.5
Output Third Order Intercept (IP3)
28 31
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Icq = 200 mA
Noise Figure
6
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
Control Current (Ipd)
Vpd = 3V
7
Switching Speed
tOn, tOff
45
20.5
29
9
12
23.0
22.5
26
32
3.7
6
0.002 /
285
7
45
8
8
18 21.5
21.0
24
27 30
6
0.002 /
285
7
45
dB
dB
dBm
dBm
dBm
%
dB
mA
mA
ns
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HMC415LP3 Даташит, Описание, Даташиты
HMC415* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC415LP3 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC415 Data Sheet
TOOLS AND SIMULATIONS
HMC415 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Package/Assembly Qualification Test Report: Plastic
Encapsulated QFN (QTR: 05006 REV: 02)
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC415 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC415 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
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HMC415LP3 Даташит, Описание, Даташиты
v03.0605
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
3
S21
S11
S22
4567
FREQUENCY (GHz)
8
Input Return Loss vs. Temperature
0
-5
-10
+25 C
-15 +85 C
-40 C
-20
4.8 5 5.2 5.4 5.6 5.8 6
FREQUENCY (GHz)
P1dB vs. Temperature
30
28
26
24
22
20
18
+25 C
16 +85 C
14 -40 C
12
10
4.8 5 5.2 5.4 5.6
FREQUENCY (GHz)
5.8
6
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Gain vs. Temperature
24
22
20
18
16
14
12
10 +25 C
8 +85 C
6 -40 C
4
2
0
4.8 5 5.2 5.4 5.6
FREQUENCY (GHz)
5.8
6
Output Return Loss vs. Temperature
0
+25 C
-5 +85 C
-40 C
-10
-15
-20
4.8 5 5.2 5.4 5.6 5.8 6
FREQUENCY (GHz)
Psat vs. Temperature
30
28
26
24
22
20
+25 C
18 +85 C
16 -40 C
14
12
10
4.8 5 5.2 5.4 5.6
FREQUENCY (GHz)
5.8
6
11
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11 - 67










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Номер в каталогеОписаниеПроизводители
HMC415LP3GaAs InGaP HBT MMIC POWER AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
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