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PDF HMC452QS16G Data sheet ( Hoja de datos )
| Número de pieza | HMC452QS16G | |
| Descripción | InGaP HBT 1 WATT POWER AMPLIFIER/ 0.45 - 2.2 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0504
MICROWAVE CORPORATION
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
8
8 - 226
Typical Applications
Features
The HMC452QS16G is ideal for applications requiring
a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Functional Diagram
Output IP3: +48 dBm
Gain: 15.5 dB @ 900 MHz
46% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
The HMC452QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifier operating
between 0.45 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the
amplifier gain is typically 15.5 dB from 0.8 to 1.0
GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a
minimum number of external components and
a single +5V supply, the amplifier output IP3
can be optimized to +48 dBm at 0.9 GHz and
1.9 GHz. The power control (VPD) can be used
for full power down or RF output power/current
control. The high output IP3 and PAE makes the
HMC452QS16G an ideal power amplifier for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V (note 1)
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
810 - 960
1710 - 1990
MHz
Gain
13 15.5
7.5 10
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
dB / °C
Input Return Loss
9 17 dB
Output Return Loss
12 15 dB
Output Power for 1dB Compression (P1dB)
27 30
28 31
dBm
Saturated Output Power (Psat)
31
31.5
dBm
Output Third Order Intercept (IP3) (note 2)
45 48
45 48
dBm
Noise Figure
7 7 dB
Supply Current (Icq)
485 485 mA
Control Current (IPD)
10 10 mA
Note 1: Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0504
MICROWAVE CORPORATION
8 Output IP3 vs. Temperature @ 1900 MHz
54
52
50
48
46
44
42
40
+25 C
38 +85 C
36 -40 C
34
1.7 1.8 1.9 2 2.1
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 1900 MHz
0
+25 C
-5 +85 C
-40 C
-10
-15
-20
-25
1.7
1.8 1.9
FREQUENCY (GHz)
2
2.1
Gain, Power & IP3
vs. Supply Current @ 1900 MHz
50
45
40
35
30
25
Gain
20 P1dB
Psat
15 OIP3
10
5
250 300 350 400 450 500
Icq (mA)
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
Noise Figure
vs. Temperature @ 1900 MHz
10
9
8
7
6
5
4
3
2
1
0
1.7 1.8 1.9
2
FREQUENCY (GHz)
+25 C
+85 C
-40 C
2.1
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
55
50
45
40
35
30
25
20
15
10
5
4.5
Gain
P1dB
Psat
OIP3
4.75
5
Vs (Vdc)
5.25
5.5
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
-25
-30
-35 CDMA2000
Frequency: 1.96 GHz
-40 Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-45
-50 4.5V 5V 5.5V
-55
-60
-65
Source ACPR
-70
14 16 18 20 22 24 26
Channel Power (dBm)
28
8 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page 
v00.0504
MICROWAVE CORPORATION
8 1900 MHz Evaluation PCB
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
List of Materials for Evaluation PCB 108703-1900*
Item
J1 - J2
J3
C1
C2
C3, C5, C6
C4
C7, C8
Description
PC Mount SMA Connector
2 mm DC Header
5.0 pF Capacitor, 0402 Pkg.
27 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
3.9 pF Capacitor, 0402 Pkg.
2.2 µF Capacitor, Tantalum
The circuit board used in this application should use RF
circuit design techniques. Signal lines should have 50
ohm impedance while the package ground leads and
exposed paddle should be connected directly to the
ground plane similar to that shown. A sufficient number
of VIA holes should be used to connect the top and
bottom ground planes. The evaluation board should be
mounted to an appropriate heat sink. The evaluation cir-
cuit board shown is available from Hittite upon request.
L1, L2
20 nH Inductor, 0402 Pkg.
R1 5.6 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G
PCB**
108701 Evaluation PCB, 10 mils
** Circuit Board Material: Rogers 4350, Er = 3.48
* Reference this number when ordering complete evaluation PCB.
8 - 236
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
11 Page | ||
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| PDF Descargar | [ Datasheet HMC452QS16G.PDF ] | |
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