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PDF HMC459 Data sheet ( Hoja de datos )
| Número de pieza | HMC459 | |
| Descripción | GaAs PHEMT MMIC POWER AMPLIFIER/ DC - 18.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC459 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MICROWAVE CORPORATION
v00.0204
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
1
1 - 76
Typical Applications
The HMC459 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Functional Diagram
Features
+25 dBm P1dB Output Power
Gain: 17 dB
+31.5 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
General Description
The HMC459 is a GaAs MMIC PHEMT Distrib-
uted Power Amplifier die which operates between
DC and 18 GHz. The amplifier provides 17 dB
of gain, +31.5 dBm output IP3 and +25 dBm of
output power at 1 dB gain compression while
requiring 290 mA from a +8V supply. Gain flat-
ness is good making the HMC459 ideal for EW,
ECM and radar driver amplifier applications. The
HMC459 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min Typ Max Units
Frequency Range
DC - 2.0
DC - 6.0
DC - 10.0
DC - 18.0
GHz
Gain
16.5 18.5
15 18
14 17
9 12
dB
Gain Flatness
±0.5
± 0.75
± 0.75
dB
Gain Variation Over Temperature
0.02 0.03
0.02 0.03
0.03 0.04
0.035 0.045 dB/ °C
Input Return Loss
22 19.5 19 10 dB
Output Return Loss
27 15 14 14 dB
Output Power for 1 dB
Compression (P1dB)
21 24
20.5 24.5
22 25
14 17
dBm
Saturated Output Power (Psat)
26.5
26.5
26.5
21 dBm
Output Third Order Intercept (IP3)
40
34
31.5
26 dBm
Noise Figure
4.0 4.0 3.0 6.5 dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290 290 290 mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v00.0204
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
1 Pad Descriptions
Pad Number
Function
1 RFIN
Description
This pad is AC coupled and matched to 50 Ohms
from DC - 20.0 GHz
Interface Schematic
Gate Control 2 for amplifier. +3V should be applied to Vgg2
2
Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
RF output for amplifier. Connect the DC
4 RFOUT & Vdd bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
5
Vgg1
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
6
Die
Bottom
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit here in.
GND
Die bottom must be connected to RF/DC ground.
1 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC459.PDF ] | |
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