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PDF HMC463 Data sheet ( Hoja de datos )
| Número de pieza | HMC463 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER/ DC - 20.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
1 Typical Applications
The HMC463 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
Vgg2: Optional Gate Bias for AGC
Features
Gain: 14 dB
Noise Figure: 2.5 dB @ 10 GHz
P1dB Output Power: +19 dBm @ 10 GHz
Supply Voltage: +5.0V @ 60 mA
50 Ohm Matched Input/Output
3.15 mm x 1.63 mm x 0.1 mm
General Description
The HMC463 is a GaAs MMIC PHEMT Low Noise
AGC Distributed Amplifier die which operates
between 2 and 20 GHz. The amplifier provides 14
dB of gain, 2.5 dB noise figure and 19 dBm of output
power at 1 dB gain compression while requiring only
60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 10 dB typical. Gain flatness is excellent
at ±0.15 dB from 6 - 18 GHz making the HMC463
ideal for EW, ECM and RADAR applications. The
HMC463 amplifier can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small size.
All data is with the chip in a 50 Ohm test fixture con-
nected via 0.025mm (1 mil) diameter wire bonds of
minimal length 0.31mm (12 mils).
1 - 98
Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)
Min. Typ. Max.
2.0 - 6.0
12 15
±1.0
0.015 0.025
3.0 4.0
12
11
16 19
21
31
60
Min. Typ. Max.
6.0 - 18.0
12 14
± 0.15
0.015 0.025
2.5 3.7
15
12
13 16
20
28
60
* Adjust Vgg1 between -1.5 to -0.5V to achieve Idd= 60 mA typical.
Min. Typ. Max.
18.0 - 20.0
12 14
± 0.15
0.015 0.025
3.5 4.0
14
10
11 14
19
26
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
60 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
1 Pad Descriptions
Pad Number
Function
1 RFIN
Description
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
Interface Schematic
2
Vgg2
Optional gate control if AGC is required.
Leave Vgg2 open circuited if AGC is not required.
3 Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
4
RFOUT
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
5
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC463.PDF ] | |
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