HMC465 Datasheet PDF - Hittite Microwave Corporation
| Part Number | HMC465 | |
| Description | GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER/ DC - 20.0 GHz | |
| Manufacturers | Hittite Microwave Corporation | |
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v03.0704
HMC465
MICROWAVE CORPORATION
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
1
1 - 112
Typical Applications
The HMC465 wideband driver is ideal for:
• OC192 LN/MZ Modulator Driver
• Telecom Infrastructure
• Test Instrumentation
• Military & Space
Features
Gain: 17 dB
Output Voltage to 10Vpk-pk
+24 dBm Saturated Output Power
Supply Voltage: +8V @160 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Functional Diagram
General Description
The HMC465 is a GaAs MMIC PHEMT Distrib-
uted Driver Amplifier die which operates between
DC and 20 GHz. The amplifier provides 17 dB of
gain, 2.5 dB noise figure and +24 dBm of saturated
output power while requiring only 160 mA from a
+8V supply. Gain flatness is excellent at ±0.25 dB
as well as +/- 1 deg deviation from linear phase
from DC - 10 GHz making the HMC465 ideal for
OC192 fiber optic LN/MZ modulator driver ampli-
fier as well as test equipment applications. The
HMC465 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025 mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA*
Parameter
Min.
Typ. Max. Min.
Typ.
Max.
Min.
Typ.
Max. Units
Frequency Range
DC - 6.0
6.0 - 12.0
12.0 - 20.0
GHz
Gain
15 18
15 17
13 16.5
dB
Gain Flatness
±0.5
±0.25
±0.5
dB
Gain Variation Over Temperature
0.015 0.025
0.015 0.025
0.02
0.03 dB/ °C
Noise Figure
3.0 5.0
2.5 3.5
3.0 4.5 dB
Input Return Loss
18 20 16 dB
Output Return Loss
18 17 17 dB
Output Power for 1 dB Compression (P1dB) 19.5
22.5
19 22
17 20
dBm
Saturated Output Power (Psat) 24 24 22 dBm
Output Third Order Intercept (IP3)
33
30
26 dBm
Saturated Output Voltage
10 10
8 Vpk-pk
Group Delay Variation
± 3 ± 3 ± 3 pSec
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.6V Typ.)
160
160
160 mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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v03.0704
HMC465
MICROWAVE CORPORATION
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
1 Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
Interface Schematic
2
Vgg2
Gate Control 2 for amplifier. +1.5V should be applied to
Vgg2 for nominal operation.
3 ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
4 ACG2
5
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
6 ACG3
Low frequency termination. Attach bypass capacitor per
application circuit herein.
7 ACG4
8 Vgg1
Gate Control 2 for amplifier.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 116
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HMC465 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HMC465.PDF Datasheet ] | |
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