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PDF HMC469MS8G Data sheet ( Hoja de datos )
| Número de pieza | HMC469MS8G | |
| Descripción | SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0504
MICROWAVE CORPORATION
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 306
Typical Applications
The HMC469MS8G is a dual RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Features
+18 dBm P1dB Output Power
15 dB Gain
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm2 Ultra Small 8 Lead MSOP
General Description
The HMC469MS8G is a SiGe HBT Dual Channel
Gain Block MMIC SMT amplifier covering DC to
5 GHz. This versatile product contains two gain
blocks, packaged in a single 8 lead plastic MSOP,
for use as either separate cascadable 50 Ohm RF/IF
gain stages, LO or PA drivers or with both amplifiers
combined utilizing external 90° hybrids to create
a high linearity driver amplifier. Each amplifier in
the HMC469MS8G offers 15 dB of gain, +18dBm
P1dB with a +34 dBm output IP3 at 850 MHz while
requiring only 75 mA from a single positive supply.
The combined dual amplifier circuit delivers up
to +20 dBm P1dB with +35dBm OIP3 for specific
application bands through 4 GHz.
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
Gain Variation Over Temperature
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
12.5
11
10
9
7.5
15
13
12
11
9.5
0.008
Input Return Loss
Output Return Loss
Reverse Isolation
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
12
10
8
14
10
8
6
18
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
15 18
13 16
11 14
9.5 12.5
8 11
34
30
25
23
4.0
5.0
Supply Current (Icq)
75
Max.
0.012
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
1 page  
MICROWAVE CORPORATION
v00.0504
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 29.58 mW/°C above 85 °C)
1.92 W
Thermal Resistance
(junction to ground paddle)
33.8 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
8 - 310
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC469MS8G.PDF ] | |
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| HMC469MS8G | SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | Hittite Microwave Corporation |
| HMC469MS8G | SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | Hittite Microwave Corporation |
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