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HMC479ST89 PDF даташит

Спецификация HMC479ST89 изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz».

Детали детали

Номер произв HMC479ST89
Описание SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC479ST89 Даташит, Описание, Даташиты
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 274
Typical Applications
The HMC479ST89 is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SOT89 Package
General Description
The HMC479ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC479ST89 offers 15 dB of gain with a +33
dBm output IP3 at 850 MHz while requiring only 75
mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and excellent gain
stability over temperature while requiring a minimal
number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11.5
10.5
9.5
8.5
15
13.5
12.5
11.5
10.5
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
Input Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
12
16
18
22
Output Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
20
22
Reverse Isolation
DC - 5.0 GHz
18
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz 15 18
1.0 - 2.0 GHz 13 16
2.0 - 3.0 GHz 11 14
3.0 - 4.0 GHz 10 13
4.0 - 5.0 GHz 8 11
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
33
30
25
23
Noise Figure
DC - 3.0 GHz
3.0 - 5.0 GHz
4.0
4.5
Supply Current (Icq)
75
Note: Data taken with broadband bias tee on device output.
Max.
0.012
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA









No Preview Available !

HMC479ST89 Даташит, Описание, Даташиты
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
S21
S11
-5 S22
-10
-15
-20
-25
-30
-35
-40
0123456
FREQUENCY (GHz)
7
8
Gain vs. Temperature
20
18
16
14
12
10
8
6
4
2
0
01234
FREQUENCY (GHz)
+25C
+85C
-40C
56
8
Input Return Loss vs. Temperature
0
-5 +25C
+85C
-40C
-10
-15
-20
-25
-30
0123456
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5 +25C
+85C
-10 -40C
-15
-20
-25
-30
-35
-40
0123456
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+25C
-5 +85C
-40C
-10
-15
-20
-25
1
234
FREQUENCY (GHz)
5
6
Noise Figure vs. Temperature
10
9
8
7
6
5
4
3
2
1
0
0
+25C
+85C
-40C
1234
FREQUENCY (GHz)
5
6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 275









No Preview Available !

HMC479ST89 Даташит, Описание, Даташиты
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
P1dB vs. Temperature
22
20
18
16
14
12
10
8
6
+25C
4 +85C
-40C
2
0
0123456
FREQUENCY (GHz)
Psat vs. Temperature
22
20
18
16
14
12
10
8
6 +25C
+85C
4 -40C
2
0
0123456
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
35
30
25
20
+25C
+85C
-40C
15
0123456
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 72 mA @ 850 MHz
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8 Gain
6
4
P1dB
Psat
OIP3
2
0
5 6 7 8 9 10 11 12
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 51 Ohms
82
80 +85C
78
76 +25C
74
72
-40C
70
68
66
3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6
Vcc (Vdc)
8 - 276
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com










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Номер в каталогеОписаниеПроизводители
HMC479ST89SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHzHittite Microwave Corporation
Hittite Microwave Corporation

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