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PDF HMC481ST89 Data sheet ( Hoja de datos )
| Número de pieza | HMC481ST89 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0204
MICROWAVE CORPORATION
HMC481ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 286
Typical Applications
The HMC481ST89 is an ideal RF/IF
gain block & LO or PA driver for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +19 dBm
Gain: 20 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Industry Standard SOT89 Package
General Description
The HMC481ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +21 dBm output power.
The HMC481ST89 offers 20 dB of gain with a +33
dBm output IP3 at 1 GHz while requiring only 79
mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and excellent gain
stability over temperature while requiring a minimal
number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
18
15.5
13
11
9
20
17.5
15
13
11
dB
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
0.016
dB/ °C
Input Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
12
15
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
17
27
23
dB
dB
dB
Reverse Isolation
DC - 5.0 GHz
18
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz 16 19
1.0 - 2.0 GHz 15 18
2.0 - 3.0 GHz 13 16
3.0 - 4.0 GHz 11 14
4.0 - 5.0 GHz 9 12
dBm
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
33
30
27
25
dBm
dBm
dBm
dBm
Noise Figure
DC - 4.0 GHz
4.0 - 5.0 GHz
3.5
4.0
dB
dB
Supply Current (Icq)
79 mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0204
MICROWAVE CORPORATION
HMC481ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8 Pin Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 79 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
6V
11 Ω
1/8 W
8V
39 Ω
1/4 W
10V
62 Ω
1/2 W
12V
91 Ω
1W
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
2400
18 nH
18 nH
15 nH
100 pF
100 pF
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 290
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
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| PDF Descargar | [ Datasheet HMC481ST89.PDF ] | |
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