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PDF HMMC-5023 Data sheet ( Hoja de datos )

Número de pieza HMMC-5023
Descripción 23 GHz LNA (21.2-26.5 GHz)
Fabricantes Agilent(Hewlett-Packard) 
Logotipo Agilent(Hewlett-Packard) Logotipo



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23 GHz LNA
(21.2 – 26.5 GHz)
Technical Data
HMMC-5023
Features
• Frequency Range:
21 .2 – 23.6 GHz and
24.5 – 26.5 GHz Specified
21– 30 GHz Performance
• Low Noise Temperature:
226 K (2.5 dB N.F.) Typical
• High Gain: 24 dB Typical
• 50 Input/Output Matching
• Single Supply Bias with
Optional Bias Adjust:
5 volts (@ 24 mA Typical)
Description
The HMMC-5023 MMIC is a high-
gain low-noise amplifier (LNA)
that operates from 21 GHz to over
30 GHz. By eliminating the
complex tuning and assembly
processes typically required by
hybrid (discrete-FET) amplifiers,
the HMMC-5023 is a cost-effective
alternative in 21.2 – 23.6 GHz and
24.5 – 26.5 GHz communications
receivers. The device has good
input and output match to
50␣ ohms and is unconditionally
stable to more than 40 GHz. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and costs.
It is fabricated using a PHEMT
integrated circuit structure that
provides exceptional noise and
gain performance.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 620 µm (74 x 24.4 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
80 x 80 µm (3.1 x 3.1 mils), or larger
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
VD1, VD2 Drain Supply Voltage
V 38
VD1, VD2 Gate Supply Voltage
V 0.4 2
ID1 Drain Supply Current
mA
35
ID2 Drain Supply Current
mA
Pin RF Input Power[2]
dBm
Tch Operating Channel Temp.[3]
°C
35
15
+150
TA
TSTG
Backside Ambient Temp.
Storage Temperature
°C -55 +140
°C -65 +165
Tmax
Maximum Assembly Temp.
°C
+300
Notes:
1. Absolute maximum rating for continuous operation unless otherwise noted.
2. Operating at this power level for extended (continuous) periods is not
recommended.
3. Refer to DC Specifications/Physical Properties table for derating information.
5965-5448E
6-34

1 page




HMMC-5023 pdf
HMMC-5023 Typical Performance
30 VD1 = VD2 = 5.0 V
26
0.02 dB/°C[1]
typical
22
Spec Range
18 21.2 – 23.6 GHz
–55°C
–30°C
0° C
+30°C
+60°C
+100°C
5 VD1 = VD2 = 5.0 V, TA = 25°C [3]
4 Spec Range
21.2 – 23.6 GHz
3
2
14 1
10
19.0
20.2 21.4 22.6 23.8
FREQUENCY (GHz)
25.0
Figure 4. Small-Signal Gain vs.
Frequency and Ambient Temperature[1].
0
19.0
20.2 21.4 22.6 23.8
FREQUENCY (GHz)
25.0
Figure 5. Noise Figure vs. Frequency[2].
20 VD1 = VD2 = 5.0 V
21 GHz
25
Gain
23 GHz
20
20
15
10
0 VD1 = VD2 = 5.0 V, fO = 22 GHz
–15
Gain
–30
30
25
20
15 5
ηadded
10 0
2 4 6 8 10 12
OUTPUT POWER (dBm)
Figure 6. Gain Compression and
Efficiency Characteristics[2].
–45
2nd Harmonic
15
–60
2
4 6 8 10
OUTPUT POWER (dBm)
10
12
Figure 7. Second Harmonic and Gain
Compression Characteristics[2].
Notes:
1. Device tested while mounted on a HP83040 Modular Microcircuit Fixture calibrated at the coaxial
connectors. Test results shown have been degraded by the fixture due to loss and impedance mismatch
errors. The temperature coefficient of the fixture alone is approximately 0.003 dB/°C at 20 GHz.
2. Data obtained from wafer-probed measurements.
3. The temperature coefficient of noise figure was measured for one device mounted on a HP83040 Modular
Microcircuit Fixture. The uncorrected result, <0.014 dB/°C, includes the effects of the fixture.
600
520
RF INPUT
300
RF OUTPUT
300
80
0
0
435 755
1235
1555
Figure 8. HMMC-5023 Bonding Pad Locations. (Dimensions are in micrometers)
6-38
105 (VG2 Y-axis)
0
1880

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