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HN1K04FU PDF даташит

Спецификация HN1K04FU изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «TOSHIBA Field Effect Transistor Silicon N Channel MOS Type».

Детали детали

Номер произв HN1K04FU
Описание TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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HN1K04FU Даташит, Описание, Даташиты
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.8 to 2.5 V
· Switching speed is fast.
· Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
50
10
50
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 50V, VGS = 0 V
VDS = 5V, ID = 0.1 mA
VDS = 5V, ID = 10 mA
ID = 10 mA, VGS = 4.0 V
VDS = 5 V, VGS=0 V, f = 1 MHz
VDS = 5 V, VGS=0 V, f = 1 MHz
VDS = 5 V, VGS=0 V, f = 1 MHz
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
VDD = 5 V, ID = 10 mA,
VGS = 0 to 4.0 V
Min Typ. Max Unit
¾ ¾ 1 mA
50 ¾ ¾ V
¾ ¾ 1 mA
0.8 ¾ 2.5 V
20 ¾ ¾ mS
¾ 20 50 W
¾ 6.3 ¾ pF
¾ 1.3 ¾ pF
¾ 5.7 ¾ pF
¾ 0.11 ¾
¾ 0.15 ¾
ms
1 2002-01-16









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HN1K04FU Даташит, Описание, Даташиты
Equivalent Circuit (top view)
654
Marking
654
HN1K04FU
Q1
Q2
KH
123
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
4 V IN
10 ms
VIN
ID OUT VDD = 5 V
D.U. <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
VDD Ta = 25°C
123
(b) VIN
VGS
(c) VOUT
VDS
4V
90%
0
VDD
10%
10%
VDS (ON)
90%
tr
tf
ton toff
2 2002-01-16









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HN1K04FU Даташит, Описание, Даташиты
(Q1, Q2 common)
60
3.0
50 4.0
40
ID – VDS
Common source
Ta = 25°C
2.7
30
2.4
20
VGS = 2.1 V
10
1.8 1.5
0 2 4 6 8 10 12
Drain-source voltage VDS (V)
IDR – VDS
50
30 Common source
VGS = 0
10
Ta = 25°C
5D
3
1 G IDR
0.5 S
0.3
0.1
0.05
0.03
0.01
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
Drain-source voltage VDS (V)
HN1K04FU
ID – VDS (low voltage region)
1.2
4.0
2.0
1.0
1.8
Common source
1.7
Ta = 25°C
0.8
1.65
0.6
VGS = 1.6 V
0.4
1.55
0.2 1.5
0
0 0.1
0.2 0.3 0.4
0.5 0.6
Drain-source voltage VDS (V)
50
30 Ta = 100°C
10
5
3
ID – VGS
Common source
VDS = 5 V
1
0.5
0.3
0.1
0.05
0.03
25
-25
0.01
0
1 234
56 7 8
Drain-source voltage VGS (V)
9
100
Common
50 source
VDS = 5 V
Ta = 25°C
30
ïYfsï – ID
10
5
3
0.5 1
35
10
30 50 100
Drain current ID (mA)
100
50
30
10
5
3
1
0.5
0.3
0.1
C – VDS
Common source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3 0.5 1
3 5 10
30 50
Drain-source voltage VDS (V)
3 2002-01-16










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