HN29W12811 PDF даташит
Спецификация HN29W12811 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)». |
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Детали детали
Номер произв | HN29W12811 |
Описание | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Производители | Hitachi Semiconductor |
логотип |
30 Pages
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HN29W12811 Series
128M AND type Flash Memory
More than 8,029-sector (135,657,984-bit)
ADE-203-1183C (Z)
Rev. 2.0
Feb. 7, 2001
Description
The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all
sector address).
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)
Data register: (2048 + 64) bytes
• Multi-level memory cell
2 bit/per memory cell
• Automatic programming
Sector program time: 2.5 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
• Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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HN29W12811 Series
• Erase mode
Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
First access time: 50 µs (max)
Serial access time: 60 ns (max)
• Low power dissipation:
ICC2 = 40 mA (max) (Read)
ISB2 = 50 µA (max) (Standby)
ICC3/ICC4 = 40 mA (max) (Erase/Program)
ISB3 = 5 µA (max) (Deep standby)
• The following architecture is required for data reliability.
Error correction: more than 1-bit error correction per each sector read
Spare sectors: 1.8% (145 sectors) within usable sectors
Ordering Information
Type No.
HN29W12811T-60
Available sector
More than 8,029 sectors
Package
12.0 × 18.40 mm2 0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
2
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Pin Arrangement
HN29W12811 Series
VCC
VSS
VSS
VSS
VSS
RES
RDY/Busy
SC
OE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
CDE
WE
CE
VSS
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP
(Top view)
48 NC
47 NC
46 NC
45 NC
44 NC
43 NC
42 NC
41 NC
40 NC
39 NC
38 NC
37 NC
36 NC
35 NC
34 NC
33 NC
32 NC
31 NC
30 NC
29 NC
28 NC
27 NC
26 NC
25 NC
Pin Description
Pin name
Function
I/O0 to I/O7
Input/output
CE Chip enable
OE Output enable
WE Write enable
CDE
Command data enable
VCC*1
VSS * 1
RDY/Busy
Power supply
Ground
Ready/Busy
RES
Reset
SC Serial clock
Note: 1. All VCC and VSS pins should be connected to a common power supply and a ground, respectively.
3
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Номер в каталоге | Описание | Производители |
HN29W12811 | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | Hitachi Semiconductor |
HN29W12811T-60 | 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) | Hitachi Semiconductor |
HN29W12814A | 128M and Type Flash Memory More than 16057 Sector X 2 | Hitachi |
HN29W12814ATT-50 | 128M and Type Flash Memory More than 16057 Sector X 2 | Hitachi |
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