HN29W25611 PDF даташит
Спецификация HN29W25611 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)». |
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Детали детали
Номер произв | HN29W25611 |
Описание | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Производители | Hitachi Semiconductor |
логотип |
30 Pages
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HN29W25611 Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-995B (Z)
Rev. 1.0
Dec. 10, 1999
Description
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
• Multi-level memory cell
2 bit/per memory cell
• Automatic programming
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
• Automatic erase
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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HN29W25611 Series
• Erase mode
Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
First access time: 50 µs (max)
Serial access time: 50 ns (max)
• Low power dissipation:
ICC2 = 50 mA (max) (Read)
ISB2 = 50 µA (max) (Standby)
ICC3/ICC4 = 40 mA (max) (Erase/Program)
ISB3 = 5 µA (max) (Deep standby)
• The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (290 sectors) within usable sectors
Ordering Information
Type No.
HN29W25611T-50
Available sector
More than 16,057 sectors
Package
12.0 × 18.40 mm2 0.5 mm pitch
48-pin plastic TSOP I (TFP-48D)
2
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Pin Arrangement
HN29W25611 Series
VSS
VCC
OE
I/O0
I/O1
I/O2
I/O3
VSS
NC
NC
NC
NC
NC
NC
NC
NC
VCC
I/O4
I/O5
I/O6
I/O7
SC
VSS
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP
(Top view)
48 VSS
47 VSS
46 NC
45 CDE
44 NC
43 RES
42 NC
41 VCC
40 NC
39 NC
38 NC
37 NC
36 NC
35 NC
34 NC
33 NC
32 VSS
31 RDY/Busy
30 WE
29 NC
28 CE
27 NC
26 VCC
25 VSS
Pin Description
Pin name
Function
I/O0 to I/O7
Input/output
CE Chip enable
OE Output enable
WE Write enable
CDE
Command data enable
VCC*1
VSS * 1
RDY/Busy
Power supply
Ground
Ready/Busy
RES
Reset
SC Serial clock
NC No connection
Note: 1. All VCC and VSS pins should be connected to a common power supply and a ground, respectively.
3
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Номер в каталоге | Описание | Производители |
HN29W25611 | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
HN29W25611T | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
HN29W25611T-50 | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
HN29W25611T-50H | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
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