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PDF HN58C256AT-10 Data sheet ( Hoja de datos )
| Número de pieza | HN58C256AT-10 | |
| Descripción | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN58C256A Series
HN58C257A Series
256k EEPROM (32-kword × 8-bit)
Ready/Busy and RES function (HN58C257A)
ADE-203-410D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as
32768-word × 8-bit. They have realized high speed low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
• Single 5 V supply: 5 V ±10%
• Access time: 85 ns/100 ns (max)
• Power dissipation
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Ready/Busy (only the HN58C257A series)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin (only the HN58C257A series)
• Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.
1 page  
HN58C256A Series, HN58C257A Series
Recommended DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input voltage
Operating temperature
VCC
VSS
VIL
VIH
VH * 3
Topr
4.5
0
–0.3*1
2.2
VCC – 0.5
0
Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns.
2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.
3. This function is supported by only the HN58C257A series.
Typ
5.0
0
—
—
—
—
Max Unit
5.5 V
0V
0.8 V
VCC + 0.3*2 V
VCC + 1.0 V
70 °C
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V±10%)
Parameter
Input leakage current
Output leakage current
Standby VCC current
Operating VCC current
Symbol Min
ILI —
ILO —
I CC1
—
I CC2
—
I CC3
—
—
Typ Max
— 2*1
—2
— 20
—1
— 12
— 30
Output low voltage VOL —
— 0.4
Output high voltage VOH 2.4
——
Note: 1. ILI on RES = 100 µA max (only the HN58C257A series)
Unit
µA
µA
µA
mA
mA
mA
V
V
Test conditions
VCC = 5.5 V, Vin = 5.5 V
VCC = 5.5 V, Vout = 5.5/0.4 V
CE = VCC
CE = VIH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at VCC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns at VCC = 5.5 V
IOL = 2.1 mA
IOH = –400 µA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*1
Cin — — 6
Output capacitance*1
Cout
— — 12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
5
5 Page 
HN58C256A Series, HN58C257A Series
Page Write Timing Waveform (1) (WE Controlled)
*7
Address
A0 to A14
WE
CE
OE
tAS tAH
tWP
tDL
tCS tCH
tOES
tDS
tDH
Din
RDY/Busy *2 High-Z
tDB
tBLC
tBL
tWC
tOEH
tDW
High-Z
RES *2
VCC
tRP
tRES
11
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet HN58C256AT-10.PDF ] | |
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