HN58C65P-25 PDF даташит
Спецификация HN58C65P-25 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM». |
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Детали детали
Номер произв | HN58C65P-25 |
Описание | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
Производители | Hitachi Semiconductor |
логотип |
16 Pages
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HN58C65 Series
8192-word × 8-bit Electrically Erasable and Programmable CMOS
ROM
ADE-203-374A (Z)
Rev. 1.0
Apr. 12, 1995
Description
The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It
realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.
Features
• Single 5 V Supply
• On chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (32 byte): 10 ms max
• Fast access time: 250 ns max
• Low power dissipation: 20 mW/MHz typ (Active)
2.0 mW typ (Standby)
• Data polling and Ready/Busy
• Data protection circuity on power on/power off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 year data retention
Ordering Information
Type No.
Access Time
Package
HN58C65P-25
250 ns
600 mil 28 pin plastic DIP (DP-28)
HN58C65FP-25
250 ns
28 pin plastic SOP*1 (FP-28D/DA)
Note: 1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.
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HN58C65 Series
Pin Arrangement
Pin Description
Pin Name
A0 – A12
I/O1 – I/O7
OE
CE
WE
VCC
VSS
NC
RDY/Busy
HN58C65P/FP Series
RDY/Busy
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
(Top View)
Function
Address input
Data input/output
Output enable
Chip enable
Write enable
Power (+5 V)
Ground
No connection
Ready/Busy
2
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Block Diagram
VCC High Voltage Generator
VSS
OE
CE Control Logic and Timing
WE
A0
A4
Address
Buffer and
Latch
A5
A12
Y Decoder
X Decoder
HN58C65 Series
I/O0 I/O7 RDY/Busy
I/O Buffer
and
Input Latch
Y Gating
Memory Array
Data Latch
Mode Selection
Pin Mode
CE OE WE RDY/Busy
Read
VIL VIL VIH High-Z
Standby
VIH X*1 X
High-Z
Write
VIL VIH VIL High-Z to VOL
Deselect
VIL VIH VIH High-Z
Write inhibit
X
X
VIH
X VIL X High-Z
Data polling
VIL
VIL
VIH
VOL
Note: 1. X = Don’t care
I/O
Dout
High-Z
Din
High-Z
—
Data out (I/O7)
3
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Номер в каталоге | Описание | Производители |
HN58C65P-25 | 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM | Hitachi Semiconductor |
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