HN58S256A PDF даташит
Спецификация HN58S256A изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «256 k EEPROM (32-kword x 8-bit)». |
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Детали детали
Номер произв | HN58S256A |
Описание | 256 k EEPROM (32-kword x 8-bit) |
Производители | Hitachi Semiconductor |
логотип |
17 Pages
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HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z)
Rev. 2.0
Nov. 1997
Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-
word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
technology. It also has a 64-byte page programming function to make the write operations faster.
Features
• Single supply: 2.2 to 3.6 V
• Access time: 150 ns (max)/200 ns (max)
• Power dissipation:
Active: 10 mW/MHz, (typ)
Standby: 36 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 15 ms (max)
• Automatic page write (64 bytes): 15 ms (max)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Industrial versions (Temperatur range:–40 to 85˚C) are also available.
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HN58S256A Series
Ordering Information
Type No.
HN58S256AT-15
HN58S256AT-20
Access time
150 ns
200 ns
Package
28-pin plastic TSOP (TFP-28DB)
Pin Arrangement
A2 15
A1 16
A0 17
I/O0 18
I/O1 19
I/O2 20
VSS 21
I/O3 22
I/O4 23
I/O5 24
I/O6 25
I/O7 26
CE 27
A10 28
HN58S256AT Series
(Top view)
14 A3
13 A4
12 A5
11 A6
10 A7
9 A12
8 A14
7 VCC
6 WE
5 A13
4 A8
3 A9
2 A11
1 OE
Pin Description
Pin name
A0 to A14
I/O0 to I/O7
OE
CE
WE
VCC
VSS
Function
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
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Block Diagram
VCC High voltage generator
VSS
OE
CE Control logic and timing
WE
A0
to
A5
A6
to
A14
Address
buffer and
latch
Y decoder
X decoder
HN58S256A Series
I/O0 to I/O7
I/O buffer
and
input latch
Y gating
Memory array
Data latch
Operation Table
Operation
CE OE
Read
Standby
Write
Deselect
Write inhibit
VIL VIL
VIH ×*2
VIL VIH
VIL VIH
××
× VIL
Data polling
VIL VIL
Notes: 1. Refer to the recommended DC operating condition.
2. × = Don’t care
WE
VIH
×
VIL
VIH
VIH
×
VIH
I/O
Dout
High-Z
Din
High-Z
—
—
Data out (I/O7)
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Номер в каталоге | Описание | Производители |
HN58S256A | 256 k EEPROM (32-kword x 8-bit) | Hitachi Semiconductor |
HN58S256AT-15 | 256 k EEPROM (32-kword x 8-bit) | Hitachi Semiconductor |
HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) | Hitachi Semiconductor |
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